FET, MOSFET Arrays

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Configuration
2 P-Channel (Dual)N and P-Channel
FET Feature
-Logic Level Gate
Drain to Source Voltage (Vdss)
20V20V, 8V
Current - Continuous Drain (Id) @ 25°C
430mA630mA, 775mA
Rds On (Max) @ Id, Vgs
375mOhm @ 630mA, 4.5V900mOhm @ 430mA, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
2.5nC @ 4.5V3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
46pF @ 20V175pF @ 16V
Power - Max
250mW270mW
Package / Case
6-TSSOP, SC-88, SOT-363SOT-563, SOT-666
Supplier Device Package
SC-88/SC70-6/SOT-363SOT-563
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Technology
Configuration
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
SOT-563-6_463A
NTZD3152PT1G
MOSFET 2P-CH 20V 430MA SOT563
onsemi
56,894
In Stock
1 : ¥3.86000
Cut Tape (CT)
4,000 : ¥0.85345
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
2 P-Channel (Dual)
-
20V
430mA
900mOhm @ 430mA, 4.5V
1V @ 250µA
2.5nC @ 4.5V
175pF @ 16V
250mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
SOT-363
NTJD4105CT1G
MOSFET N/P-CH 20V/8V 0.63A SC88
onsemi
1,194
In Stock
1 : ¥4.84000
Cut Tape (CT)
3,000 : ¥1.10244
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
N and P-Channel
Logic Level Gate
20V, 8V
630mA, 775mA
375mOhm @ 630mA, 4.5V
1.5V @ 250µA
3nC @ 4.5V
46pF @ 20V
270mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-88/SC70-6/SOT-363
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of 2

FET, MOSFET Arrays


Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.