FET, MOSFET Arrays

Results: 2
Series
TrenchFET®TrenchMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Configuration
2 N-Channel (Dual)N and P-Channel
Drain to Source Voltage (Vdss)
20V30V
Current - Continuous Drain (Id) @ 25°C
350mA, 200mA600mA
Rds On (Max) @ Id, Vgs
620mOhm @ 600mA, 4.5V1.4Ohm @ 350mA, 4.5V
Vgs(th) (Max) @ Id
950mV @ 250µA1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.68nC @ 4.5V0.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
21.3pF @ 10V50pF @ 15V
Power - Max
265mW445mW
Package / Case
6-TSSOP, SC-88, SOT-3636-XFDFN Exposed Pad
Supplier Device Package
6-TSSOPDFN1010B-6
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Technology
Configuration
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
6DFN
PMDXB600UNEZ
MOSFET 2N-CH 20V 0.6A 6DFN
Nexperia USA Inc.
32,735
In Stock
1 : ¥2.87000
Cut Tape (CT)
5,000 : ¥0.49118
Tape & Reel (TR)
1 : ¥3.61000
Cut Tape (CT)
Tape & Reel (TR)
Cut Tape (CT)
Cut Tape (CT)
Digi-Reel®
Digi-Reel®
Active
MOSFET (Metal Oxide)
2 N-Channel (Dual)
Logic Level Gate
20V
600mA
620mOhm @ 600mA, 4.5V
950mV @ 250µA
0.7nC @ 4.5V
21.3pF @ 10V
265mW
-55°C ~ 150°C (TJ)
-
-
Surface Mount
6-XFDFN Exposed Pad
DFN1010B-6
SOT363
NX3008CBKS,115
MOSFET N/P-CH 30V 0.35A 6TSSOP
Nexperia USA Inc.
32,534
In Stock
1 : ¥3.78000
Cut Tape (CT)
3,000 : ¥0.68500
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
N and P-Channel
Logic Level Gate
30V
350mA, 200mA
1.4Ohm @ 350mA, 4.5V
1.1V @ 250µA
0.68nC @ 4.5V
50pF @ 15V
445mW
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
6-TSSOP, SC-88, SOT-363
6-TSSOP
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FET, MOSFET Arrays


Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.