FET, MOSFET Arrays

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

FDC6420C MOSFET N/P-CH 20V 3A/2.2A SSOT6 onsemi	2,915 In Stock	1 : ¥5.01000 Cut Tape (CT) 3,000 : ¥1.89055 Tape & Reel (TR)	PowerTrench®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	N and P-Channel	Logic Level Gate	20V	3A, 2.2A	70mOhm @ 3A, 4.5V	1.5V @ 250µA	4.6nC @ 4.5V	324pF @ 10V	700mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	SuperSOT™-6
IRF7103TRPBF MOSFET 2N-CH 50V 3A 8SO Infineon Technologies	6,558 In Stock	1 : ¥7.64000 Cut Tape (CT) 4,000 : ¥2.91619 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	-	50V	3A	130mOhm @ 3A, 10V	3V @ 250µA	30nC @ 10V	290pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO

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FET, MOSFET Arrays

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.