FET, MOSFET Arrays

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

EPC2106 GANFET 2N-CH 100V 1.7A DIE EPC	61,042 In Stock	1 : ¥15.19000 Cut Tape (CT) 2,500 : ¥6.83752 Tape & Reel (TR)	eGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	GaNFET (Gallium Nitride)	2 N-Channel (Half Bridge)	-	100V	1.7A	70mOhm @ 2A, 5V	2.5V @ 600µA	0.73nC @ 5V	75pF @ 50V	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
DMC2004LPK-7 MOSFET N/P-CH 20V 0.75A 6DFN Diodes Incorporated	8,898 In Stock 117,000 Factory	1 : ¥3.37000 Cut Tape (CT) 3,000 : ¥1.12146 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	N and P-Channel	Logic Level Gate	20V	750mA, 600mA	550mOhm @ 540mA, 4.5V	1V @ 250µA	-	150pF @ 16V	500mW	-65°C ~ 150°C (TJ)	Surface Mount	6-SMD, No Lead	DFN1612-6
SSM6N37FE,LM MOSFET 2N-CH 20V 0.25A ES6 Toshiba Semiconductor and Storage	1,050 In Stock	1 : ¥2.71000 Cut Tape (CT) 4,000 : ¥0.52947 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	Logic Level Gate	20V	250mA	2.2Ohm @ 100mA, 4.5V	1V @ 1mA	-	12pF @ 10V	150mW	150°C (TJ)	Surface Mount	SOT-563, SOT-666	ES6

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FET, MOSFET Arrays

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.