FET, MOSFET Arrays

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

BSS138DW-7-F MOSFET 2N-CH 50V 0.2A SOT363 Diodes Incorporated	85,128 In Stock 2,415,000 Factory	1 : ¥3.69000 Cut Tape (CT) 3,000 : ¥0.99221 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	Logic Level Gate	50V	200mA	3.5Ohm @ 220mA, 10V	1.5V @ 250µA	-	50pF @ 10V	200mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
DMHT6016LFJ-13 MOSFET 4N-CH 60V 14.8A 12VDFN Diodes Incorporated	12,114 In Stock	1 : ¥12.73000 Cut Tape (CT) 3,000 : ¥5.72163 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	4 N-Channel (Full Bridge)	-	60V	14.8A (Ta)	22mOhm @ 10A, 10V	3V @ 250µA	8.4nC @ 4.5V	864pF @ 30V	-	-55°C ~ 150°C (TJ)	Surface Mount	12-VDFN Exposed Pad	V-DFN5045-12

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FET, MOSFET Arrays

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.