FET, MOSFET Arrays

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

2N7002DWH6327XTSA1 MOSFET 2N-CH 60V 0.3A SOT363 Infineon Technologies	88,412 In Stock	1 : ¥3.37000 Cut Tape (CT) 3,000 : ¥0.60649 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	Logic Level Gate	60V	300mA	3Ohm @ 500mA, 10V	2.5V @ 250µA	0.6nC @ 10V	20pF @ 25V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	6-VSSOP, SC-88, SOT-363	PG-SOT363-PO
AUIRFN8459TR MOSFET 2N-CH 40V 50A PQFN Infineon Technologies	13,323 In Stock	1 : ¥22.17000 Cut Tape (CT) 4,000 : ¥10.79924 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	-	40V	50A	5.9mOhm @ 40A, 10V	3.9V @ 50µA	60nC @ 10V	2250pF @ 25V	50W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	PQFN (5x6)

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FET, MOSFET Arrays

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.