FET, MOSFET Arrays

Results: 2
Manufacturer
Diodes IncorporatedNexperia USA Inc.
Series
-TrenchMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
20V30V
Current - Continuous Drain (Id) @ 25°C
350mA, 200mA1.34A, 1.14A
Rds On (Max) @ Id, Vgs
400mOhm @ 600mA, 4.5V1.4Ohm @ 350mA, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.68nC @ 4.5V0.74nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
50pF @ 15V60.67pF @ 16V
Power - Max
445mW1.12W
Package / Case
6-TSSOP, SC-88, SOT-363SOT-23-6
Supplier Device Package
6-TSSOPSOT-26
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Technology
Configuration
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
SOT 26
DMC2700UDM-7
MOSFET N/P-CH 20V SOT26
Diodes Incorporated
1,187,037
In Stock
4,932,000
Factory
1 : ¥2.30000
Cut Tape (CT)
3,000 : ¥0.42068
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
N and P-Channel
Logic Level Gate
20V
1.34A, 1.14A
400mOhm @ 600mA, 4.5V
1V @ 250µA
0.74nC @ 4.5V
60.67pF @ 16V
1.12W
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-6
SOT-26
SOT363
NX3008CBKS,115
MOSFET N/P-CH 30V 0.35A 6TSSOP
Nexperia USA Inc.
32,414
In Stock
1 : ¥3.78000
Cut Tape (CT)
3,000 : ¥0.68497
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
N and P-Channel
Logic Level Gate
30V
350mA, 200mA
1.4Ohm @ 350mA, 4.5V
1.1V @ 250µA
0.68nC @ 4.5V
50pF @ 15V
445mW
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
6-TSSOP, SC-88, SOT-363
6-TSSOP
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of 2

FET, MOSFET Arrays


Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.