FET, MOSFET Arrays

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

NTJD5121NT1G MOSFET 2N-CH 60V 0.295A SC88 onsemi	124,126 In Stock	1 : ¥2.96000 Cut Tape (CT) 3,000 : ¥0.49294 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	Logic Level Gate	60V	295mA	1.6Ohm @ 500mA, 10V	2.5V @ 250µA	0.9nC @ 4.5V	26pF @ 20V	250mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88/SC70-6/SOT-363
NTHD3102CT1G MOSFET N/P-CH 20V 4A CHIPFET onsemi	5 In Stock	1 : ¥8.37000 Cut Tape (CT)	-	Tape & Reel (TR) Cut Tape (CT)	Obsolete	MOSFET (Metal Oxide)	N and P-Channel	Logic Level Gate	20V	4A, 3.1A	45mOhm @ 4.4A, 4.5V	1.2V @ 250µA	7.9nC @ 4.5V	510pF @ 10V	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Leads	ChipFET™

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FET, MOSFET Arrays

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.