FET, MOSFET Arrays

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

SI7223DN-T1-GE3 MOSFET 2P-CH 30V 6A PPAK 1212 Vishay Siliconix	7,849 In Stock	1 : ¥7.39000 Cut Tape (CT) 3,000 : ¥3.05599 Tape & Reel (TR)	TrenchFET® Gen III	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 P-Channel (Dual)	-	30V	6A (Tc)	26.4mOhm @ 8A, 10V	2.5V @ 250µA	40nC @ 10V	1425pF @ 15V	2.6W (Ta), 23W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8 Dual	PowerPAK® 1212-8 Dual
CSD75207W15 MOSFET 2P-CH 3.9A 9DSBGA Texas Instruments	3,778 In Stock	1 : ¥5.25000 Cut Tape (CT) 3,000 : ¥1.74264 Tape & Reel (TR)	NexFET™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 P-Channel (Dual) Common Source	Logic Level Gate	-	3.9A	162mOhm @ 1A, 1.8V	1.1V @ 250µA	3.7nC @ 4.5V	595pF @ 10V	700mW	-55°C ~ 150°C (TJ)	Surface Mount	9-UFBGA, DSBGA	9-DSBGA

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FET, MOSFET Arrays

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.