SiC (Silicon Carbide) Schottky Single Diodes

Results: 1,393
Manufacturer
ANBON SEMICONDUCTOR (INT'L) LIMITEDBourns Inc.BruckewellCentral Semiconductor CorpComchip TechnologyDiodes IncorporatedDiotec SemiconductorGeneSiC SemiconductorGlobal Power Technology-GPTInfineon TechnologiesInventchipIXYS
Series
-Amp+™CoolSiC™CoolSiC™+EE-SeriesECOPACK®ECOPACK®2eSMP®Gen-IIIGen2GEN2
Packaging
BulkCut Tape (CT)Digi-Reel®Tape & Box (TB)Tape & Reel (TR)TrayTube
Product Status
ActiveDiscontinued at Digi-KeyLast Time BuyNot For New DesignsObsolete
Voltage - DC Reverse (Vr) (Max)
100 V300 V600 V650 V680 V700 V800 V1200 V1700 V2000 V3300 V8000 V
Current - Average Rectified (Io)
50mA300mA750mA1A2A2.15A2.5A3A3A (DC)3.5A4A4.3A
Voltage - Forward (Vf) (Max) @ If
1.27 V @ 4 A1.27 V @ 20 A1.3 V @ 1 A1.3 V @ 2.5 A1.3 V @ 8 A1.34 V @ 4 A1.34 V @ 10 A1.35 V @ 1 A1.35 V @ 2 A1.35 V @ 3 A1.35 V @ 4 A1.35 V @ 6 A
Speed
-Fast Recovery =< 500ns, > 200mA (Io)No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns11.6 ns15 ns
Current - Reverse Leakage @ Vr
2 µA @ 650 V2 µA @ 1200 V3 µA @ 650 V3 µA @ 1200 V3.8 µA @ 8000 V4 µA @ 1200 V5 µA @ 100 V5 µA @ 300 V5 µA @ 600 V5 µA @ 650 V5 µA @ 1200 V5 µA @ 3300 V
Capacitance @ Vr, F
1.5pF @ 0V, 1MHz8.7pF @ 650V, 1MHz11pF @ 400V, 1MHz12pF @ 650V, 1MHz16pF @ 650V, 1MHz20pF @ 800V, 1MHz22pF @ 650V, 1MHz25pF @ 1V, 1MHz26pF @ 400V, 1MHz28pF @ 600V, 1MHz28pF @ 650V, 1MHz29pF @ 800V, 1MHz
Grade
-Automotive
Qualification
-AEC-Q100/101AEC-Q101
Mounting Type
-Surface MountThrough Hole
Package / Case
4-PowerTSFN4-PowerVQFN4-PowerVSFN4-VSFN Exposed Pad8-PowerTDFN8-PowerVDFN10-PowerSOP Module10-PowerTQFN-AxialDieDO-214AA, SMB
Supplier Device Package
4-DFN (8x8)4-DFN-EP (8x8)4-PQFN (8x8)4-QFN (8x8)5-DFN (8x8)8-PDFNWB (5x6)10-Power QFN (3.3x3.3)-D2PAKD2PAK HVD3PAKDFN5060
Operating Temperature - Junction
-65°C ~ 175°C-55°C ~ 150°C-55°C ~ 160°C-55°C ~ 175°C-55°C ~ 210°C-55°C ~ 225°C-55°C ~ 250°C-50°C ~ 175°C-40°C ~ 150°C-40°C ~ 175°C150°C (Max)175°C175°C (Max)-
Stocking Options
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Marketplace Product
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Mfr Part #
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Price
Series
Package
Product Status
Technology
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
CSD01060E-TR
CSD01060E-TR
DIODE SIL CARB 600V 4A TO252-2
Wolfspeed, Inc.
15,072
In Stock
1 : ¥12.64000
Cut Tape (CT)
2,500 : ¥5.22584
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
SiC (Silicon Carbide) Schottky
600 V
4A
1.8 V @ 1 A
No Recovery Time > 500mA (Io)
0 ns
100 µA @ 600 V
80pF @ 0V, 1MHz
-
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252-2
-55°C ~ 175°C
DO-214AA, SMB
GB01SLT06-214
DIODE SIL CARB 650V 1A DO214AA
GeneSiC Semiconductor
14,095
In Stock
1 : ¥13.38000
Cut Tape (CT)
3,000 : ¥8.29196
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
SiC (Silicon Carbide) Schottky
650 V
1A
2 V @ 1 A
No Recovery Time > 500mA (Io)
0 ns
10 µA @ 6.5 V
76pF @ 1V, 1MHz
-
-
Surface Mount
DO-214AA, SMB
DO-214AA
-55°C ~ 175°C
C2D05120E
C3D04060E
DIODE SIL CARB 600V 13.5A TO252
Wolfspeed, Inc.
5,130
In Stock
1 : ¥14.94000
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
600 V
13.5A
1.7 V @ 4 A
No Recovery Time > 500mA (Io)
0 ns
50 µA @ 600 V
251pF @ 0V, 1MHz
-
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252-2
-55°C ~ 175°C
TO-220-2
IDH04G65C5XKSA2
DIODE SIL CARB 650V 4A TO220-2-1
Infineon Technologies
4,427
In Stock
1 : ¥16.17000
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
650 V
4A
1.7 V @ 4 A
No Recovery Time > 500mA (Io)
0 ns
70 µA @ 650 V
130pF @ 1V, 1MHz
-
-
Through Hole
TO-220-2
PG-TO220-2-1
-55°C ~ 175°C
CSD01060E-TR
C4D02120E-TR
DIODE SIL CARB 1.2KV 10A TO252-2
Wolfspeed, Inc.
611
In Stock
1 : ¥16.67000
Cut Tape (CT)
2,500 : ¥7.49920
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
SiC (Silicon Carbide) Schottky
1200 V
10A
1.8 V @ 2 A
No Recovery Time > 500mA (Io)
0 ns
50 µA @ 1200 V
167pF @ 0V, 1MHz
-
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252-2
-55°C ~ 175°C
C2D05120E
C4D02120E
DIODE SIL CARB 1.2KV 10A TO252-2
Wolfspeed, Inc.
17,100
In Stock
1 : ¥16.91000
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
1200 V
10A
1.8 V @ 2 A
No Recovery Time > 500mA (Io)
0 ns
50 µA @ 1200 V
167pF @ 0V, 1MHz
-
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252-2
-55°C ~ 175°C
MFG_DPAK(TO252-3)
STPSC6H065B-TR
DIODE SIL CARBIDE 650V 6A DPAK
STMicroelectronics
4,244
In Stock
1 : ¥17.73000
Cut Tape (CT)
2,500 : ¥7.97891
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
SiC (Silicon Carbide) Schottky
650 V
6A
1.75 V @ 6 A
No Recovery Time > 500mA (Io)
0 ns
60 µA @ 650 V
300pF @ 0V, 1MHz
-
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
DPAK
-40°C ~ 175°C
TO252-3
IDM02G120C5XTMA1
DIODE SIL CARB 1.2KV 2A TO252-2
Infineon Technologies
7,487
In Stock
1 : ¥18.06000
Cut Tape (CT)
2,500 : ¥8.14557
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
SiC (Silicon Carbide) Schottky
1200 V
2A
1.65 V @ 2 A
No Recovery Time > 500mA (Io)
0 ns
18 µA @ 1200 V
182pF @ 1V, 1MHz
-
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
PG-TO252-2
-55°C ~ 175°C
MFG_DPAK(TO252-3)
STPSC2H12B2Y-TR
DIODE SIL CARBIDE 1.2KV 5A DPAK
STMicroelectronics
14,515
In Stock
1 : ¥20.28000
Cut Tape (CT)
2,500 : ¥9.15344
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
SiC (Silicon Carbide) Schottky
1200 V
5A
1.5 V @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
12 µA @ 1200 V
190pF @ 0V, 1MHz
-
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
DPAK
-40°C ~ 175°C
DO-214AA, SMB
GB01SLT12-214
DIODE SIL CARBIDE 1.2KV 2.5A SMB
GeneSiC Semiconductor
12,627
In Stock
1 : ¥21.10000
Cut Tape (CT)
3,000 : ¥13.79247
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
SiC (Silicon Carbide) Schottky
1200 V
2.5A
1.8 V @ 1 A
No Recovery Time > 500mA (Io)
0 ns
10 µA @ 1200 V
69pF @ 1V, 1MHz
-
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 175°C
C2D05120A
C3D06060A
DIODE SIL CARB 600V 19A TO220-2
Wolfspeed, Inc.
2,780
In Stock
1 : ¥22.49000
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
600 V
19A
1.8 V @ 6 A
No Recovery Time > 500mA (Io)
0 ns
50 µA @ 600 V
294pF @ 0V, 1MHz
-
-
Through Hole
TO-220-2
TO-220-2
-55°C ~ 175°C
C3D02060F
C3D06060F
DIODE SIC 600V 11.5A TO220-F2
Wolfspeed, Inc.
2,109
In Stock
1 : ¥22.49000
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
600 V
11.5A
1.8 V @ 6 A
No Recovery Time > 500mA (Io)
0 ns
50 µA @ 600 V
294pF @ 0V, 1MHz
-
-
Through Hole
TO-220-2 Full Pack
TO-220-F2
-55°C ~ 175°C
TO252-3
IDM05G120C5XTMA1
DIODE SIL CARB 1.2KV 5A TO252-2
Infineon Technologies
3,290
In Stock
1 : ¥24.79000
Cut Tape (CT)
2,500 : ¥12.04966
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
SiC (Silicon Carbide) Schottky
1200 V
5A
1.8 V @ 5 A
No Recovery Time > 500mA (Io)
0 ns
33 µA @ 1200 V
301pF @ 1V, 1MHz
-
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
PG-TO252-2
-55°C ~ 175°C
DO-214AA, SMB
GB02SLT12-214
DIODE SIL CARB 1.2KV 2A DO214AA
GeneSiC Semiconductor
19,531
In Stock
1 : ¥26.27000
Cut Tape (CT)
3,000 : ¥17.65119
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
SiC (Silicon Carbide) Schottky
1200 V
2A
1.8 V @ 1 A
No Recovery Time > 500mA (Io)
0 ns
50 µA @ 1200 V
131pF @ 1V, 1MHz
-
-
Surface Mount
DO-214AA, SMB
DO-214AA
-55°C ~ 175°C
MFG_DPAK(TO252-3)
STPSC10H065B-TR
DIODE SIL CARBIDE 650V 10A DPAK
STMicroelectronics
13,768
In Stock
1 : ¥27.34000
Cut Tape (CT)
2,500 : ¥13.32576
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
SiC (Silicon Carbide) Schottky
650 V
10A
1.75 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
100 µA @ 650 V
480pF @ 0V, 1MHz
-
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
DPAK
-40°C ~ 175°C
TO-252-2
GD10MPS12E
DIODE SIL CARB 1.2KV 29A TO252-2
GeneSiC Semiconductor
5,142
In Stock
1 : ¥29.39000
Cut Tape (CT)
2,500 : ¥18.96478
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
SiC (Silicon Carbide) Schottky
1200 V
29A
1.8 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
5 µA @ 1200 V
367pF @ 1V, 1MHz
-
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252-2
-55°C ~ 175°C
TO-220-2
GD10MPS12A
DIODE SIL CARB 1.2KV 25A TO220-2
GeneSiC Semiconductor
2,139
In Stock
1 : ¥31.94000
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
1200 V
25A
1.8 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
5 µA @ 1200 V
367pF @ 1V, 1MHz
-
-
Through Hole
TO-220-2
TO-220-2
-55°C ~ 175°C
C2D05120A
C3D10060A
DIODE SIL CARB 600V 30A TO220-2
Wolfspeed, Inc.
2,386
In Stock
1 : ¥33.66000
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
600 V
30A
1.8 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
50 µA @ 600 V
480pF @ 0V, 1MHz
-
-
Through Hole
TO-220-2
TO-220-2
-55°C ~ 175°C
C3D06060G
C3D10060G
DIODE SIL CARB 600V 29A TO263-2
Wolfspeed, Inc.
666
In Stock
1 : ¥33.66000
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
600 V
29A
1.8 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
50 µA @ 600 V
480pF @ 0V, 1MHz
-
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263-2
-55°C ~ 175°C
C2D05120E
C4D05120E
DIODE SIL CARB 1.2KV 19A TO252-2
Wolfspeed, Inc.
3,933
In Stock
1 : ¥37.11000
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
1200 V
19A
1.8 V @ 5 A
No Recovery Time > 500mA (Io)
0 ns
150 µA @ 1200 V
390pF @ 0V, 1MHz
-
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252-2
-55°C ~ 175°C
SCS210AJTLL
SCS210AJTLL
DIODE SIL CARB 650V 10A TO263AB
Rohm Semiconductor
774
In Stock
1 : ¥43.76000
Cut Tape (CT)
1,000 : ¥22.62893
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
SiC (Silicon Carbide) Schottky
650 V
10A
1.55 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
200 µA @ 600 V
365pF @ 1V, 1MHz
-
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AB
175°C (Max)
TO-220-2
IDH10G120C5XKSA1
DIODE SIL CARB 1.2KV 10A TO220-1
Infineon Technologies
1,369
In Stock
1 : ¥45.65000
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
1200 V
10A
1.8 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
62 µA @ 1200 V
525pF @ 1V, 1MHz
-
-
Through Hole
TO-220-2
PG-TO220-2-1
-55°C ~ 175°C
C2D05120E
C4D10120E
DIODE SIL CARB 1.2KV 33A TO252-2
Wolfspeed, Inc.
6,425
In Stock
1 : ¥46.71000
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
1200 V
33A
1.8 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
250 µA @ 1200 V
754pF @ 0V, 1MHz
-
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252-2
-55°C ~ 175°C
TO-220-2
IDH16G65C6XKSA1
DIODE SIL CARB 650V 34A TO220-2
Infineon Technologies
170
In Stock
1 : ¥50.41000
Tube
-
Tube
Active
SiC (Silicon Carbide) Schottky
650 V
34A
1.35 V @ 16 A
No Recovery Time > 500mA (Io)
0 ns
53 µA @ 420 V
783pF @ 1V, 1MHz
-
-
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 175°C
TO-220-2
GD20MPS12A
DIODE SIL CARB 1.2KV 42A TO220-2
GeneSiC Semiconductor
2,327
In Stock
1 : ¥52.38000
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
1200 V
42A
1.8 V @ 20 A
No Recovery Time > 500mA (Io)
0 ns
10 µA @ 1200 V
737pF @ 1V, 1MHz
-
-
Through Hole
TO-220-2
TO-220-2
-55°C ~ 175°C
Showing
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SiC (Silicon Carbide) Schottky Single Diodes

Products within the single rectifier diode family are used to allow current flow in one direction only, and implement exactly one instance of this function per device package. Diodes used for other purposes (including zener and variable capacitance diodes) are listed separately in product families of their own, as are products incorporating multiple diodes per device package.