Bipolar Transistor Arrays

Results: 3
Manufacturer
Central Semiconductor CorpNexperia USA Inc.onsemi
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveNot For New Designs
Transistor Type
2 NPN (Dual)2 PNP (Dual)
Vce Saturation (Max) @ Ib, Ic
200mV @ 5mA, 50mA300mV @ 5mA, 50mA400mV @ 5mA, 50mA
Current - Collector Cutoff (Max)
50nA (ICBO)-
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10mA, 1V150 @ 10mA, 1V
Power - Max
150mW360mW500mW
Frequency - Transition
250MHz300MHz
Operating Temperature
-65°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
SOT-563SOT-666
Stocking Options
Environmental Options
Media
Marketplace Product
3Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
SOT-563-6_463A
NST3906DXV6T1G
TRANS 2PNP 40V 0.2A SOT563
onsemi
11,300
In Stock
1 : ¥3.53000
Cut Tape (CT)
4,000 : ¥0.77180
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
2 PNP (Dual)
200mA
40V
400mV @ 5mA, 50mA
-
100 @ 10mA, 1V
500mW
250MHz
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-563, SOT-666
SOT-563
SOT666
PMBT3904VS,115
TRANS 2NPN 40V 0.2A SOT666
Nexperia USA Inc.
15,124
In Stock
1 : ¥3.86000
Cut Tape (CT)
4,000 : ¥0.69683
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
2 NPN (Dual)
200mA
40V
300mV @ 5mA, 50mA
50nA (ICBO)
100 @ 10mA, 1V
360mW
300MHz
150°C (TJ)
Automotive
AEC-Q101
Surface Mount
SOT-563, SOT-666
SOT-666
6,154
In Stock
1 : ¥5.25000
Cut Tape (CT)
3,000 : ¥2.00872
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
2 PNP (Dual)
200mA
40V
200mV @ 5mA, 50mA
-
150 @ 10mA, 1V
150mW
300MHz
-65°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-563, SOT-666
SOT-563
Showing
of 3

Bipolar Transistor Arrays


Bipolar transistor arrays incorporate two or more discrete transistors in a shared package, either as electrically separate entities or with interconnections of some form between them being made inside the device package. Arrays in which the devices contained have closely matched or complementary characteristics, the co-packaged character minimizes temperature differences between devices during operation.