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SIHB22N60E-GE3

DigiKey Part Number
SIHB22N60E-GE3-ND
Manufacturer
Manufacturer Product Number
SIHB22N60E-GE3
Description
MOSFET N-CH 600V 21A D2PAK
Manufacturer Standard Lead Time
15 Weeks
Customer Reference
Detailed Description
N-Channel 600 V 21A (Tc) 227W (Tc) Surface Mount TO-263 (D2PAK)
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Series
-
Packaging
Tube
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
86 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1920 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
227W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
Base Product Number
All prices are in CNY
Tube
QuantityUnit Price
(Including 13% VAT)
Ext Price
(Including 13% VAT)
50¥25.77060¥1,288.53
100¥22.08930¥2,208.93
250¥20.86244¥5,215.61
500¥19.63522¥9,817.61
1,250¥16.81263¥21,015.79
2,500¥15.83090¥39,577.25
5,000¥15.18814¥75,940.70
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.