SIHB12N60ET1-GE3 is available for purchase but is not normally stocked.
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Rohm Semiconductor
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Datasheet

SIHB12N60ET1-GE3

DigiKey Part Number
SIHB12N60ET1-GE3-ND
Manufacturer
Manufacturer Product Number
SIHB12N60ET1-GE3
Description
MOSFET N-CH 600V 12A TO263
Manufacturer Standard Lead Time
15 Weeks
Customer Reference
Detailed Description
N-Channel 600 V 12A (Tc) 147W (Tc) Surface Mount TO-263 (D2PAK)
Product Attributes
Type
Description
Select All
Category
Mfr
Series
Packaging
Bulk
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
380mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
58 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
937 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
147W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
Base Product Number
All prices are in CNY
Bulk
QuantityUnit Price
(Including 13% VAT)
Ext Price
(Including 13% VAT)
800¥9.16666¥7,333.33
Manufacturers Standard Package