SIHB11N80E-GE3 | |
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DigiKey Part Number | 742-SIHB11N80E-GE3-ND |
Manufacturer | |
Manufacturer Product Number | SIHB11N80E-GE3 |
Description | MOSFET N-CH 800V 12A D2PAK |
Manufacturer Standard Lead Time | 23 Weeks |
Customer Reference | |
Detailed Description | N-Channel 800 V 12A (Tc) 179W (Tc) Surface Mount TO-263 (D2PAK) |
Datasheet | Datasheet |
Type | Description | Select All |
---|---|---|
Category | ||
Mfr | ||
Series | ||
Packaging | Tube | |
Part Status | Active | |
FET Type | ||
Technology | ||
Drain to Source Voltage (Vdss) | 800 V | |
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 440mOhm @ 5.5A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 88 nC @ 10 V | |
Vgs (Max) | ±30V | |
Input Capacitance (Ciss) (Max) @ Vds | 1670 pF @ 100 V | |
FET Feature | - | |
Power Dissipation (Max) | 179W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | TO-263 (D2PAK) | |
Package / Case | ||
Base Product Number |
Quantity | Unit Price (Including 13% VAT) | Ext Price (Including 13% VAT) |
---|---|---|
1 | ¥30.13000 | ¥30.13 |
10 | ¥25.27800 | ¥252.78 |
100 | ¥20.44820 | ¥2,044.82 |
500 | ¥18.17586 | ¥9,087.93 |
1,000 | ¥15.56308 | ¥15,563.08 |
2,000 | ¥14.65430 | ¥29,308.60 |
5,000 | ¥14.05929 | ¥70,296.45 |