IRFD210PBF

DigiKey Part Number
IRFD210PBF-ND
Manufacturer
Manufacturer Product Number
IRFD210PBF
Description
MOSFET N-CH 200V 600MA 4DIP
Customer Reference
Detailed Description
N-Channel 200 V 600mA (Ta) 1W (Ta) Through Hole 4-HVMDIP
Datasheet
 Datasheet
EDA/CAD Models
IRFD210PBF Models
Product Attributes
Type
Description
Select All
Category
Mfr
Series
-
Packaging
Bulk
Part Status
Last Time Buy
FET Type
Technology
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.5Ohm @ 360mA, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
8.2 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
140 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
4-HVMDIP
Package / Case
Base Product Number
All prices are in CNY
Bulk
QuantityUnit Price
(Including 13% VAT)
Ext Price
(Including 13% VAT)
1¥7.72000¥7.72
10¥6.29700¥62.97
100¥4.89620¥489.62
500¥4.15008¥2,075.04
1,000¥4.10476¥4,104.76