GT50JR22(STA1,E,S)

DigiKey Part Number
264-GT50JR22(STA1ES)-ND
Manufacturer
Manufacturer Product Number
GT50JR22(STA1,E,S)
Description
PB-F IGBT / TRANSISTOR TO-3PN(OS
Manufacturer Standard Lead Time
12 Weeks
Customer Reference
Detailed Description
IGBT 600 V 50 A 230 W Through Hole TO-3P(N)
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Manufacturer
Toshiba Semiconductor and Storage
Series
-
Packaging
Tube
Part Status
Active
IGBT Type
-
Voltage - Collector Emitter Breakdown (Max)
600 V
Current - Collector (Ic) (Max)
50 A
Current - Collector Pulsed (Icm)
100 A
Vce(on) (Max) @ Vge, Ic
2.2V @ 15V, 50A
Power - Max
230 W
Switching Energy
-
Input Type
Standard
Td (on/off) @ 25°C
-
Test Condition
-
Operating Temperature
175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Supplier Device Package
TO-3P(N)
All prices are in CNY
Tube
QuantityUnit Price
(Including 13% VAT)
Ext Price
(Including 13% VAT)
1¥37.44000¥37.44
25¥29.67040¥741.76
100¥25.43070¥2,543.07
500¥22.60488¥11,302.44
1,000¥19.35552¥19,355.52
2,000¥18.22524¥36,450.48
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.