TSM60NB190CF C0G Taiwan Semiconductor Corporation | Discrete Semiconductor Products

TSM60NB190CF C0G
DigiKey Part Number	TSM60NB190CFC0G-ND
Manufacturer	Taiwan Semiconductor Corporation
Manufacturer Product Number	TSM60NB190CF C0G
Description	MOSFET N-CH 600V 18A ITO220S
Customer Reference
Detailed Description	N-Channel 600 V 18A (Tc) 59.5W (Tc) Through Hole ITO-220S
EDA/CAD Models	TSM60NB190CF C0G Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Taiwan Semiconductor Corporation
Series	-
Packaging	Tube
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	190mOhm @ 3.7A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	32 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1311 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	59.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	ITO-220S
Package / Case	TO-220-3 Full Pack
Base Product Number	TSM60