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IMW65R007M2HXKSA1 | |
|---|---|
DigiKey Part Number | 448-IMW65R007M2HXKSA1-ND |
Manufacturer | |
Manufacturer Product Number | IMW65R007M2HXKSA1 |
Description | SILICON CARBIDE MOSFET |
Manufacturer Standard Lead Time | 97 Weeks |
Customer Reference | |
Detailed Description | N-Channel 650 V 171A (Tc) 625W (Tc) Through Hole PG-TO247-3-U06 |
Datasheet | Datasheet |
Product Attributes
Type | Description | Select All |
|---|---|---|
Category | ||
Mfr | ||
Series | ||
Packaging | Tube | |
Part Status | Active | |
FET Type | ||
Technology | ||
Drain to Source Voltage (Vdss) | 650 V | |
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 15V, 20V | |
Rds On (Max) @ Id, Vgs | 6.1mOhm @ 146.3A, 20V | |
Vgs(th) (Max) @ Id | 5.6V @ 29.7mA | |
Gate Charge (Qg) (Max) @ Vgs | 179 nC @ 18 V | |
Vgs (Max) | +23V, -7V | |
Input Capacitance (Ciss) (Max) @ Vds | 6359 pF @ 400 V | |
FET Feature | - | |
Power Dissipation (Max) | 625W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Grade | - | |
Qualification | - | |
Mounting Type | Through Hole | |
Supplier Device Package | PG-TO247-3-U06 | |
Package / Case |
Quantity
All prices are in CNY
Tube
| Quantity | Unit Price (Including 13% VAT) | Ext Price (Including 13% VAT) |
|---|---|---|
| 1 | ¥324.58000 | ¥324.58 |
| 10 | ¥299.34500 | ¥2,993.45 |
| 30 | ¥285.89033 | ¥8,576.71 |
| 120 | ¥255.61950 | ¥30,674.34 |
| 270 | ¥243.84763 | ¥65,838.86 |
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