Single FETs, MOSFETs

Results: 5
Manufacturer
Infineon TechnologiesVishay Siliconix
Series
-HEXFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
100 V400 V
Current - Continuous Drain (Id) @ 25°C
10A (Tc)17A (Tc)23A (Tc)33A (Tc)40A (Tc)
Rds On (Max) @ Id, Vgs
44mOhm @ 16A, 10V60mOhm @ 24A, 10V90mOhm @ 9A, 10V117mOhm @ 11A, 10V550mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs
37 nC @ 10 V63 nC @ 10 V71 nC @ 10 V97 nC @ 10 V180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
920 pF @ 25 V1300 pF @ 25 V1400 pF @ 25 V1960 pF @ 25 V2700 pF @ 25 V
Power Dissipation (Max)
70W (Tc)125W (Tc)130W (Tc)140W (Tc)200W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
D2PAKTO-220AB
Package / Case
TO-220-3TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-220AB PKG
IRF530NPBF
MOSFET N-CH 100V 17A TO220AB
Infineon Technologies
36,201
In Stock
1 : ¥7.47000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
17A (Tc)
10V
90mOhm @ 9A, 10V
4V @ 250µA
37 nC @ 10 V
±20V
920 pF @ 25 V
-
70W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
IRF9540NPBF
IRF9540NPBF
MOSFET P-CH 100V 23A TO220AB
Infineon Technologies
2,502
In Stock
1 : ¥11.41000
Tube
Tube
Active
P-Channel
MOSFET (Metal Oxide)
100 V
23A (Tc)
10V
117mOhm @ 11A, 10V
4V @ 250µA
97 nC @ 10 V
±20V
1300 pF @ 25 V
-
140W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF540NSTRLPBF
MOSFET N-CH 100V 33A D2PAK
Infineon Technologies
9,450
In Stock
1 : ¥12.31000
Cut Tape (CT)
800 : ¥6.64328
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
33A (Tc)
10V
44mOhm @ 16A, 10V
4V @ 250µA
71 nC @ 10 V
±20V
1960 pF @ 25 V
-
130W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-220AB
IRF740PBF
MOSFET N-CH 400V 10A TO220AB
Vishay Siliconix
2,871
In Stock
1 : ¥16.09000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
400 V
10A (Tc)
10V
550mOhm @ 6A, 10V
4V @ 250µA
63 nC @ 10 V
±20V
1400 pF @ 25 V
-
125W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
TO-220AB PKG
IRF5210PBF
MOSFET P-CH 100V 40A TO220AB
Infineon Technologies
7,545
In Stock
1 : ¥19.79000
Tube
Tube
Active
P-Channel
MOSFET (Metal Oxide)
100 V
40A (Tc)
10V
60mOhm @ 24A, 10V
4V @ 250µA
180 nC @ 10 V
±20V
2700 pF @ 25 V
-
200W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
Showing
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.