Single FETs, MOSFETs

Results: 7
Manufacturer
Infineon TechnologiesToshiba Semiconductor and StorageVishay Siliconix
Series
HEXFET®OptiMOS™TrenchFET®U-MOSVIII-HU-MOSX-H
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
60 V80 V100 V
Current - Continuous Drain (Id) @ 25°C
14A (Ta), 20A (Tc)23A (Ta), 100A (Tc)55A (Ta)56A (Tc)62A (Tc)90A (Tc)110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V6V, 10V10V
Rds On (Max) @ Id, Vgs
2.8mOhm @ 50A, 10V6.5mOhm @ 27.5A, 10V6.7mOhm @ 20A, 10V6.8mOhm @ 90A, 10V6.9mOhm @ 31A, 10V11.2mOhm @ 20A, 10V13.9mOhm @ 38A, 10V
Vgs(th) (Max) @ Id
2.2V @ 35µA2.2V @ 93µA3V @ 250µA3.5V @ 500µA3.5V @ 90µA4V @ 100µA4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs
39 nC @ 10 V49 nC @ 10 V67 nC @ 10 V68 nC @ 10 V81 nC @ 10 V175 nC @ 10 V270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2700 pF @ 40 V3031 pF @ 50 V3280 pF @ 10 V4910 pF @ 50 V5100 pF @ 30 V10850 pF @ 40 V13000 pF @ 30 V
Power Dissipation (Max)
2.1W (Ta), 69W (Tc)2.5W (Ta), 139W (Tc)13.6W (Ta), 375W (Tc)89W (Tc)143W (Tc)150W (Tc)157W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)175°C175°C (TJ)
Supplier Device Package
DPAKDPAK+PG-TDSON-8-1PG-TO252-3PG-TSDSON-8TO-252AA (DPAK)TO-263 (D2PAK)
Package / Case
8-PowerTDFN8-PowerVDFNTO-252-3, DPAK (2 Leads + Tab), SC-63TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
8-TSDSON
BSZ067N06LS3GATMA1
MOSFET N-CH 60V 14A/20A 8TSDSON
Infineon Technologies
17,516
In Stock
1 : ¥11.66000
Cut Tape (CT)
5,000 : ¥4.60715
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
14A (Ta), 20A (Tc)
4.5V, 10V
6.7mOhm @ 20A, 10V
2.2V @ 35µA
67 nC @ 10 V
±20V
5100 pF @ 30 V
-
2.1W (Ta), 69W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8
8-PowerVDFN
TO252-3
IRFR4510TRPBF
MOSFET N CH 100V 56A DPAK
Infineon Technologies
30,171
In Stock
1 : ¥15.11000
Cut Tape (CT)
2,000 : ¥6.79669
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
56A (Tc)
10V
13.9mOhm @ 38A, 10V
4V @ 100µA
81 nC @ 10 V
±20V
3031 pF @ 50 V
-
143W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-252AA (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
PG-TDSON-8-1
BSC028N06LS3GATMA1
MOSFET N-CH 60V 23A/100A TDSON
Infineon Technologies
8,513
In Stock
1 : ¥22.00000
Cut Tape (CT)
5,000 : ¥9.55227
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
23A (Ta), 100A (Tc)
4.5V, 10V
2.8mOhm @ 50A, 10V
2.2V @ 93µA
175 nC @ 10 V
±20V
13000 pF @ 30 V
-
2.5W (Ta), 139W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-1
8-PowerTDFN
TO-263 (D2Pak)
SUM110P08-11L-E3
MOSFET P-CH 80V 110A TO263
Vishay Siliconix
46,008
In Stock
1 : ¥36.70000
Cut Tape (CT)
800 : ¥22.15600
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
80 V
110A (Tc)
4.5V, 10V
11.2mOhm @ 20A, 10V
3V @ 250µA
270 nC @ 10 V
±20V
10850 pF @ 40 V
-
13.6W (Ta), 375W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO252-3
IPD068N10N3GATMA1
MOSFET N-CH 100V 90A TO252-3
Infineon Technologies
11,051
In Stock
1 : ¥12.89000
Cut Tape (CT)
2,500 : ¥7.67515
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
90A (Tc)
6V, 10V
6.8mOhm @ 90A, 10V
3.5V @ 90µA
68 nC @ 10 V
±20V
4910 pF @ 50 V
-
150W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
1,629
In Stock
1 : ¥13.46000
Cut Tape (CT)
2,500 : ¥3.69008
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
62A (Tc)
6V, 10V
6.9mOhm @ 31A, 10V
3.5V @ 500µA
39 nC @ 10 V
±20V
2700 pF @ 40 V
-
89W (Tc)
175°C
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
5,303
In Stock
1 : ¥29.31000
Cut Tape (CT)
2,000 : ¥9.83124
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
55A (Ta)
10V
6.5mOhm @ 27.5A, 10V
4V @ 500µA
49 nC @ 10 V
±20V
3280 pF @ 10 V
-
157W (Tc)
175°C (TJ)
Surface Mount
DPAK+
TO-252-3, DPAK (2 Leads + Tab), SC-63
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.