Single FETs, MOSFETs

Results: 2
Manufacturer
onsemiVishay Siliconix
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
60 V80 V
Current - Continuous Drain (Id) @ 25°C
196mA (Ta)1.2A (Ta), 2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V6V, 10V
Rds On (Max) @ Id, Vgs
270mOhm @ 1.2A, 10V5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id
3V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
1 nC @ 5 V17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
30.3 pF @ 25 V500 pF @ 40 V
Power Dissipation (Max)
347mW (Ta)760mW (Ta), 2.5W (Tc)
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT 23-3
NTR5105PT1G
MOSFET P-CH 60V 196MA SOT23-3
onsemi
349,895
In Stock
1 : ¥2.87000
Cut Tape (CT)
3,000 : ¥0.52306
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
196mA (Ta)
4.5V, 10V
5Ohm @ 100mA, 10V
3V @ 250µA
1 nC @ 5 V
±20V
30.3 pF @ 25 V
-
347mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
SOT-23(TO-236)
SI2337DS-T1-BE3
P-CHANNEL 80-V (D-S) MOSFET
Vishay Siliconix
6,312
In Stock
1 : ¥7.96000
Cut Tape (CT)
3,000 : ¥3.28224
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
80 V
1.2A (Ta), 2.2A (Tc)
6V, 10V
270mOhm @ 1.2A, 10V
4V @ 250µA
17 nC @ 10 V
±20V
500 pF @ 40 V
-
760mW (Ta), 2.5W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.