Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

SIR638DP-T1-GE3 MOSFET N-CH 40V 100A PPAK SO-8 Vishay Siliconix	3,886 In Stock	1 : ¥13.05000 Cut Tape (CT) 3,000 : ¥5.90011 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	40 V	100A (Tc)	4.5V, 10V	0.88mOhm @ 20A, 10V	2.3V @ 250µA	204 nC @ 10 V	+20V, -16V	10500 pF @ 20 V	-	104W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
BSC096N10LS5ATMA1 MOSFET N-CH 100V 40A TDSON-8-6 Infineon Technologies	5,569 In Stock	1 : ¥13.87000 Cut Tape (CT) 5,000 : ¥5.53650 Tape & Reel (TR)	OptiMOS™ 5	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	40A (Tc)	4.5V, 10V	9.6mOhm @ 20A, 10V	2.3V @ 36µA	14.6 nC @ 4.5 V	±20V	2100 pF @ 50 V	-	3W (Ta), 83W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8-6	8-PowerTDFN
IPT012N08NF2SATMA1 MOSFET Infineon Technologies	3,778 In Stock	1 : ¥44.91000 Cut Tape (CT) 1,800 : ¥23.20602 Tape & Reel (TR)	StrongIRFET™ 2	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	80 V	39A (Ta), 351A (Tc)	6V, 10V	1.23mOhm @ 150A, 10V	3.8V @ 267µA	255 nC @ 10 V	±20V	12000 pF @ 40 V	-	3.8W (Ta), 300W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PG-HSOF-8-10	8-PowerSFN

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.