Single FETs, MOSFETs

Results: 4
Manufacturer
ANBON SEMICONDUCTOR (INT'L) LIMITEDDiodes Incorporatedonsemi
Series
-PowerTrench®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
20 V60 V100 V
Current - Continuous Drain (Id) @ 25°C
200mA (Ta)380mA (Ta)2.8A (Ta)240A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V4.5V, 10V5V, 10V10V
Rds On (Max) @ Id, Vgs
2.6mOhm @ 80A, 10V90mOhm @ 3.6A, 4.5V2Ohm @ 500mA, 10V5Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id
1V @ 250µA2.5V @ 1mA2.5V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.3 nC @ 4.5 V1.8 nC @ 10 V2.8 nC @ 10 V95 nC @ 10 V
Vgs (Max)
±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
14 pF @ 50 V50 pF @ 25 V130 pF @ 10 V5120 pF @ 50 V
Power Dissipation (Max)
350mW (Ta)370mW (Ta)660mW (Ta)357W (Tj)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)150°C (TJ)
Supplier Device Package
8-HPSOFSOT-23SOT-23-3
Package / Case
8-PowerSFNTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
2N7002K-7
MOSFET N-CH 60V 380MA SOT23-3
Diodes Incorporated
332,766
In Stock
56,826,000
Factory
1 : ¥1.72000
Cut Tape (CT)
3,000 : ¥0.28983
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
380mA (Ta)
5V, 10V
2Ohm @ 500mA, 10V
2.5V @ 1mA
0.3 nC @ 4.5 V
±20V
50 pF @ 25 V
-
370mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-23-3
DMG2302UK-7
MOSFET N-CH 20V 2.8A SOT23
Diodes Incorporated
90,038
In Stock
1 : ¥2.71000
Cut Tape (CT)
3,000 : ¥0.49352
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
2.8A (Ta)
2.5V, 4.5V
90mOhm @ 3.6A, 4.5V
1V @ 250µA
2.8 nC @ 10 V
±12V
130 pF @ 10 V
-
660mW (Ta)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
8-HPSOF Top View
FDBL86063-F085
MOSFET N-CH 100V 240A 8HPSOF
onsemi
2,303
In Stock
4,000
Factory
1 : ¥53.36000
Cut Tape (CT)
2,000 : ¥28.36504
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
240A (Tc)
10V
2.6mOhm @ 80A, 10V
4V @ 250µA
95 nC @ 10 V
±20V
5120 pF @ 50 V
-
357W (Tj)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
8-HPSOF
8-PowerSFN
BSS123
BSS123
N-CHANNEL ENHANCEMENT MODE MOSFE
ANBON SEMICONDUCTOR (INT'L) LIMITED
93,554
In Stock
1 : ¥1.07000
Cut Tape (CT)
3,000 : ¥0.18956
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
200mA (Ta)
4.5V, 10V
5Ohm @ 200mA, 10V
2.5V @ 250µA
1.8 nC @ 10 V
±20V
14 pF @ 50 V
-
350mW (Ta)
150°C (TJ)
-
-
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
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of 4

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.