Single FETs, MOSFETs

Results: 4
Manufacturer
Infineon TechnologiesonsemiSTMicroelectronicsVishay Siliconix
Series
-OptiMOS™PowerMESH™TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V60 V200 V1500 V
Current - Continuous Drain (Id) @ 25°C
1.7A (Ta)8A (Tc)52A (Tc)60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V10V
Rds On (Max) @ Id, Vgs
1.6mOhm @ 25A, 10V22mOhm @ 52A, 10V185mOhm @ 2.4A, 10V2.5Ohm @ 4A, 10V
Vgs(th) (Max) @ Id
1.4V @ 250µA4V @ 137µA4V @ 1mA5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
14.3 nC @ 10 V43 nC @ 10 V89.3 nC @ 10 V625 nC @ 10 V
Vgs (Max)
±12V±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
492 pF @ 25 V3255 pF @ 25 V3680 pF @ 100 V22000 pF @ 10 V
Power Dissipation (Max)
1W (Ta)6.25W (Ta), 104W (Tc)214W (Tc)320W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
PG-TSON-8-3PowerPAK® SO-8SOT-223 (TO-261)TO-247-3
Package / Case
8-PowerTDFNPowerPAK® SO-8TO-247-3TO-261-4, TO-261AA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-223 (TO-261)
NTF2955T1G
MOSFET P-CH 60V 1.7A SOT223
onsemi
17,006
In Stock
51,000
Factory
1 : ¥9.28000
Cut Tape (CT)
1,000 : ¥4.07707
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
1.7A (Ta)
10V
185mOhm @ 2.4A, 10V
4V @ 1mA
14.3 nC @ 10 V
±20V
492 pF @ 25 V
-
1W (Ta)
-55°C ~ 175°C (TJ)
Surface Mount
SOT-223 (TO-261)
TO-261-4, TO-261AA
PG-TSON-8-3
BSC220N20NSFDATMA1
MOSFET N-CH 200V 52A TSON-8
Infineon Technologies
10,819
In Stock
1 : ¥38.01000
Cut Tape (CT)
5,000 : ¥17.77012
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
200 V
52A (Tc)
10V
22mOhm @ 52A, 10V
4V @ 137µA
43 nC @ 10 V
±20V
3680 pF @ 100 V
-
214W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TSON-8-3
8-PowerTDFN
PowerPAK SO-8
SI7157DP-T1-GE3
MOSFET P-CH 20V 60A PPAK SO-8
Vishay Siliconix
1,286
In Stock
1 : ¥12.23000
Cut Tape (CT)
3,000 : ¥5.04802
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
60A (Tc)
2.5V, 10V
1.6mOhm @ 25A, 10V
1.4V @ 250µA
625 nC @ 10 V
±12V
22000 pF @ 10 V
-
6.25W (Ta), 104W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
TO-247-3 HiP
STW9N150
MOSFET N-CH 1500V 8A TO247-3
STMicroelectronics
62
In Stock
1 : ¥74.63000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
1500 V
8A (Tc)
10V
2.5Ohm @ 4A, 10V
5V @ 250µA
89.3 nC @ 10 V
±30V
3255 pF @ 25 V
-
320W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.