Single FETs, MOSFETs

Results: 3
Manufacturer
Diodes IncorporatedEPCToshiba Semiconductor and Storage
Series
-eGaN®U-MOSIII
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveLast Time Buy
FET Type
N-ChannelP-Channel
Technology
GaNFET (Gallium Nitride)MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V100 V
Current - Continuous Drain (Id) @ 25°C
1.5A (Ta)3.2A (Ta)29A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V1.8V, 4.5V5V
Rds On (Max) @ Id, Vgs
6mOhm @ 16A, 5V47mOhm @ 2A, 4.5V100mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id
900mV @ 250µA1V @ 1mA2.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs
7.4 nC @ 5 V10.8 nC @ 4.5 V
Vgs (Max)
+6V, -4V±10V±12V
Input Capacitance (Ciss) (Max) @ Vds
510 pF @ 10 V627 pF @ 10 V851 pF @ 50 V
Power Dissipation (Max)
350mW (Ta)500mW (Ta)-
Operating Temperature
-55°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
DieES6SOT-323
Package / Case
DieSC-70, SOT-323SOT-563, SOT-666
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-323
DMP2160UW-7
MOSFET P-CH 20V 1.5A SOT-323
Diodes Incorporated
64,007
In Stock
1 : ¥3.12000
Cut Tape (CT)
3,000 : ¥0.68119
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
1.5A (Ta)
1.8V, 4.5V
100mOhm @ 1.5A, 4.5V
900mV @ 250µA
-
±12V
627 pF @ 10 V
-
350mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323
EPC2204
EPC2204
TRANS GAN 100V DIE 5.6MOHM
EPC
0
In Stock
Check Lead Time
1 : ¥19.79000
Cut Tape (CT)
2,500 : ¥8.93286
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
100 V
29A (Ta)
5V
6mOhm @ 16A, 5V
2.5V @ 4mA
7.4 nC @ 5 V
+6V, -4V
851 pF @ 50 V
-
-
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
0
In Stock
1 : ¥4.19000
Cut Tape (CT)
4,000 : ¥1.12064
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Last Time Buy
N-Channel
MOSFET (Metal Oxide)
20 V
3.2A (Ta)
1.5V, 4.5V
47mOhm @ 2A, 4.5V
1V @ 1mA
10.8 nC @ 4.5 V
±10V
510 pF @ 10 V
-
500mW (Ta)
150°C (TJ)
Surface Mount
ES6
SOT-563, SOT-666
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of 3

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.