Single FETs, MOSFETs

Results: 6
Manufacturer
Diodes IncorporatedNexperia USA Inc.
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V50 V60 V
Current - Continuous Drain (Id) @ 25°C
130mA (Ta)250mA (Ta)300mA (Ta)350mA (Ta)600mA (Ta)4.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V1.8V, 2.7V1.8V, 4.5V2.5V, 10V4.5V, 10V5V
Rds On (Max) @ Id, Vgs
50mOhm @ 6A, 10V900mOhm @ 430mA, 4.5V1.7Ohm @ 200mA, 2.7V2.8Ohm @ 250mA, 10V2.8Ohm @ 300mA, 4.5V10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id
900mV @ 100µA900mV @ 250µA1V @ 250µA1.5V @ 250µA2V @ 1mA2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.7 nC @ 4.5 V0.9 nC @ 10 V11.8 nC @ 10 V
Vgs (Max)
±8V±10V±20V±25V
Input Capacitance (Ciss) (Max) @ Vds
23.2 pF @ 25 V27 pF @ 30 V45 pF @ 25 V175 pF @ 16 V642 pF @ 25 V
Power Dissipation (Max)
200mW (Ta)270mW (Ta), 1.5W (Tc)350mW (Ta)550mW (Ta)1.38W (Ta)
Operating Temperature
-65°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Supplier Device Package
SOT-23-3SOT-323
Package / Case
SC-70, SOT-323TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
DMN63D8L-7
MOSFET N-CH 30V 350MA SOT23
Diodes Incorporated
416,802
In Stock
1 : ¥1.89000
Cut Tape (CT)
3,000 : ¥0.31827
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
350mA (Ta)
2.5V, 10V
2.8Ohm @ 250mA, 10V
1.5V @ 250µA
0.9 nC @ 10 V
±20V
23.2 pF @ 25 V
-
350mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-23-3
DMN2005K-7
MOSFET N-CH 20V 300MA SOT23-3
Diodes Incorporated
682,808
In Stock
267,000
Factory
1 : ¥2.22000
Cut Tape (CT)
3,000 : ¥0.57387
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
300mA (Ta)
1.8V, 2.7V
1.7Ohm @ 200mA, 2.7V
900mV @ 100µA
-
±10V
-
-
350mW (Ta)
-65°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-323
BSS84W-7-F
MOSFET P-CH 50V 130MA SOT323
Diodes Incorporated
354,022
In Stock
7,695,000
Factory
1 : ¥3.20000
Cut Tape (CT)
3,000 : ¥0.57291
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
50 V
130mA (Ta)
5V
10Ohm @ 100mA, 5V
2V @ 1mA
-
±20V
45 pF @ 25 V
-
200mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323
SOT-23-3
DMP3056L-7
MOSFET P-CH 30V 4.3A SOT23
Diodes Incorporated
90,531
In Stock
1 : ¥3.20000
Cut Tape (CT)
3,000 : ¥0.87259
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
4.3A (Ta)
4.5V, 10V
50mOhm @ 6A, 10V
2.1V @ 250µA
11.8 nC @ 10 V
±25V
642 pF @ 25 V
-
1.38W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-323
NX6008NBKWX
NX6008NBKW/SOT323/SC-70
Nexperia USA Inc.
49,298
In Stock
1 : ¥1.81000
Cut Tape (CT)
3,000 : ¥0.29873
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
250mA (Ta)
1.5V, 4.5V
2.8Ohm @ 300mA, 4.5V
900mV @ 250µA
0.7 nC @ 4.5 V
±8V
27 pF @ 30 V
-
270mW (Ta), 1.5W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323
SOT-23-3
DMP2004K-7
MOSFET P-CH 20V 600MA SOT23-3
Diodes Incorporated
944,889
In Stock
537,000
Factory
1 : ¥2.22000
Cut Tape (CT)
3,000 : ¥0.32204
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
600mA (Ta)
1.8V, 4.5V
900mOhm @ 430mA, 4.5V
1V @ 250µA
-
±8V
175 pF @ 16 V
-
550mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
Showing
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.