Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

IRFR5305TRPBF MOSFET P-CH 55V 31A DPAK Infineon Technologies	11,650 In Stock	1 : ¥8.21000 Cut Tape (CT) 2,000 : ¥3.39554 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	55 V	31A (Tc)	10V	65mOhm @ 16A, 10V	4V @ 250µA	63 nC @ 10 V	±20V	1200 pF @ 25 V	-	110W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
DMP610DL-7 MOSFET BVDSS: 41V 60V SOT23 T&R Diodes Incorporated	5,709 In Stock 192,000 Factory	1 : ¥1.81000 Cut Tape (CT) 3,000 : ¥0.30229 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	60 V	180mA (Ta)	5V	10Ohm @ 100mA, 5V	2V @ 1mA	0.56 nC @ 10 V	±30V	24.6 pF @ 25 V	-	310mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
DMN3731U-13 MOSFET N-CH 30V 900MA SOT23 Diodes Incorporated	6,118 In Stock	1 : ¥1.97000 Cut Tape (CT) 10,000 : ¥0.19396 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	900mA (Ta)	1.8V, 4.5V	460mOhm @ 200mA, 4.5V	950mV @ 250µA	5.5 nC @ 4.5 V	±8V	73 pF @ 25 V	-	400mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.