Single FETs, MOSFETs

Results: 11
Manufacturer
Diodes IncorporatedInfineon TechnologiesLittelfuse Inc.Nexperia USA Inc.onsemiTexas InstrumentsVishay Siliconix
Series
-HEXFET®NexFET™OptiMOS™SIPMOS®TrenchFET®TrenchMOS™TrenchP™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V50 V60 V80 V100 V
Current - Continuous Drain (Id) @ 25°C
150mA (Ta)170mA (Ta)180mA (Ta)190mA (Ta)200mA280mA (Ta)3.7A (Ta)4.3A (Ta)32A (Tc)140A (Tc)200A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V4.5V, 10V6V, 10V10V
Rds On (Max) @ Id, Vgs
2.4mOhm @ 100A, 10V12mOhm @ 70A, 10V33mOhm @ 10A, 10V50mOhm @ 6A, 10V65mOhm @ 3.7A, 4.5V3.5Ohm @ 200mA, 10V5Ohm @ 200mA, 10V6Ohm @ 100mA, 10V6Ohm @ 190mA, 10V7.5Ohm @ 100mA, 10V8Ohm @ 150mA, 10V
Vgs(th) (Max) @ Id
1.2V @ 250µA1.4V @ 26µA1.8V @ 13µA2V @ 20µA2.1V @ 250µA2.5V @ 250µA2.6V @ 1mA3.2V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.35 nC @ 5 V0.9 nC @ 10 V1.5 nC @ 10 V1.8 nC @ 10 V11.8 nC @ 10 V12 nC @ 5 V150 nC @ 10 V153 nC @ 10 V400 nC @ 10 V
Vgs (Max)
±12V±15V±20V±25V
Input Capacitance (Ciss) (Max) @ Vds
14 pF @ 25 V19.1 pF @ 25 V20 pF @ 25 V20.9 pF @ 25 V36 pF @ 25 V43 pF @ 25 V633 pF @ 10 V642 pF @ 25 V4500 pF @ 25 V12000 pF @ 50 V31400 pF @ 25 V
Power Dissipation (Max)
225mW (Ta)300mW (Ta)350mW (Ta)350mW (Ta), 1.14W (Tc)500mW (Ta)1.3W (Ta)1.38W (Ta)68W (Tc)375W (Tc)568W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)150°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
Micro3™/SOT-23PG-SOT23PG-SOT323PowerPAK® SO-8SOT-23-3SOT-23-3 (TO-236)TO-236ABTO-247 (IXTH)TO-263 (DDPAK-3)
Package / Case
PowerPAK® SO-8SC-70, SOT-323TO-236-3, SC-59, SOT-23-3TO-247-3TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Stocking Options
Environmental Options
Media
Marketplace Product
11Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
BSS123
MOSFET N-CH 100V 170MA SOT23-3
onsemi
21,648
In Stock
1 : ¥2.87000
Cut Tape (CT)
3,000 : ¥0.51984
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
200mA
4.5V, 10V
5Ohm @ 200mA, 10V
2.5V @ 250µA
1.8 nC @ 10 V
±20V
14 pF @ 25 V
-
350mW (Ta)
150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT 23-3
BSS123LT1G
MOSFET N-CH 100V 170MA SOT23-3
onsemi
271,263
In Stock
1 : ¥2.96000
Cut Tape (CT)
3,000 : ¥0.49111
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
170mA (Ta)
10V
6Ohm @ 100mA, 10V
2.6V @ 1mA
-
±20V
20 pF @ 25 V
-
225mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
SOT-23-3
DMP3056L-7
MOSFET P-CH 30V 4.3A SOT23
Diodes Incorporated
90,281
In Stock
1 : ¥3.20000
Cut Tape (CT)
3,000 : ¥0.87259
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
4.3A (Ta)
4.5V, 10V
50mOhm @ 6A, 10V
2.1V @ 250µA
11.8 nC @ 10 V
±25V
642 pF @ 25 V
-
1.38W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-23-3
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
Infineon Technologies
155,445
In Stock
1 : ¥3.45000
Cut Tape (CT)
3,000 : ¥1.03881
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
3.7A (Ta)
2.5V, 4.5V
65mOhm @ 3.7A, 4.5V
1.2V @ 250µA
12 nC @ 5 V
±12V
633 pF @ 10 V
-
1.3W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
Micro3™/SOT-23
TO-236-3, SC-59, SOT-23-3
PowerPak SO-8L
SQJ479EP-T1_GE3
MOSFET P-CH 80V 32A PPAK SO-8
Vishay Siliconix
38,967
In Stock
1 : ¥9.69000
Cut Tape (CT)
3,000 : ¥4.01919
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
80 V
32A (Tc)
4.5V, 10V
33mOhm @ 10A, 10V
2.5V @ 250µA
150 nC @ 10 V
±20V
4500 pF @ 25 V
-
68W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
DDPAK/TO-263-3
CSD19536KTT
MOSFET N-CH 100V 200A DDPAK
Texas Instruments
1,042
In Stock
1 : ¥36.45000
Cut Tape (CT)
500 : ¥22.01000
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
200A (Ta)
6V, 10V
2.4mOhm @ 100A, 10V
3.2V @ 250µA
153 nC @ 10 V
±20V
12000 pF @ 50 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263 (DDPAK-3)
TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
TO-236AB
BSS84AK,215
MOSFET P-CH 50V 180MA TO236AB
Nexperia USA Inc.
663,648
In Stock
1 : ¥1.81000
Cut Tape (CT)
3,000 : ¥0.30406
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
50 V
180mA (Ta)
10V
7.5Ohm @ 100mA, 10V
2.1V @ 250µA
0.35 nC @ 5 V
±20V
36 pF @ 25 V
-
350mW (Ta), 1.14W (Tc)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
SOT-323
BSS84PWH6327XTSA1
MOSFET P-CH 60V 150MA SOT323-3
Infineon Technologies
22,274
In Stock
1 : ¥2.96000
Cut Tape (CT)
3,000 : ¥0.50028
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
150mA (Ta)
4.5V, 10V
8Ohm @ 150mA, 10V
2V @ 20µA
1.5 nC @ 10 V
±20V
19.1 pF @ 25 V
-
300mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-SOT323
SC-70, SOT-323
SOT-323
BSS138WH6327XTSA1
MOSFET N-CH 60V 280MA SOT323-3
Infineon Technologies
148,757
In Stock
1 : ¥3.04000
Cut Tape (CT)
3,000 : ¥0.54070
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
280mA (Ta)
4.5V, 10V
3.5Ohm @ 200mA, 10V
1.4V @ 26µA
1.5 nC @ 10 V
±20V
43 pF @ 25 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-SOT323
SC-70, SOT-323
SOT-23-3
BSS123NH6433XTMA1
MOSFET N-CH 100V 190MA SOT23-3
Infineon Technologies
226,031
In Stock
1 : ¥3.12000
Cut Tape (CT)
10,000 : ¥0.45904
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
190mA (Ta)
4.5V, 10V
6Ohm @ 190mA, 10V
1.8V @ 13µA
0.9 nC @ 10 V
±20V
20.9 pF @ 25 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-SOT23
TO-236-3, SC-59, SOT-23-3
TO-247-AD-EP-(H)
IXTH140P10T
MOSFET P-CH 100V 140A TO247
Littelfuse Inc.
287
In Stock
1 : ¥148.60000
Tube
Tube
Active
P-Channel
MOSFET (Metal Oxide)
100 V
140A (Tc)
10V
12mOhm @ 70A, 10V
4V @ 250µA
400 nC @ 10 V
±15V
31400 pF @ 25 V
-
568W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247 (IXTH)
TO-247-3
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of 11

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.