Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

BSC220N20NSFDATMA1 MOSFET N-CH 200V 52A TSON-8 Infineon Technologies	10,819 In Stock	1 : ¥38.01000 Cut Tape (CT) 5,000 : ¥17.76949 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	200 V	52A (Tc)	10V	22mOhm @ 52A, 10V	4V @ 137µA	43 nC @ 10 V	±20V	3680 pF @ 100 V	-	214W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PG-TSON-8-3	8-PowerTDFN
NTMT064N65S3H MOSFET N-CH 650V 40A 4TDFN onsemi	5,837 In Stock	1 : ¥72.74000 Cut Tape (CT) 3,000 : ¥38.65467 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	650 V	40A (Tc)	10V	64mOhm @ 20A, 10V	4V @ 3.9mA	82 nC @ 10 V	±30V	3745 pF @ 400 V	-	260W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	4-TDFN (8x8)	4-PowerTSFN
STW7NK90Z MOSFET N-CH 900V 5.8A TO247-3 STMicroelectronics	69 In Stock	1 : ¥33.49000 Tube	SuperMESH™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	900 V	5.8A (Tc)	10V	2Ohm @ 2.9A, 10V	4.5V @ 100µA	60.5 nC @ 10 V	±30V	1350 pF @ 25 V	-	140W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
SIR882DP-T1-GE3 MOSFET N-CH 100V 60A PPAK SO-8 Vishay Siliconix	0 In Stock Check Lead Time	1 : ¥19.78000 Cut Tape (CT) 3,000 : ¥8.93255 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	60A (Tc)	4.5V, 10V	8.7mOhm @ 20A, 10V	2.8V @ 250µA	58 nC @ 10 V	±20V	1930 pF @ 50 V	-	5.4W (Ta), 83W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.