Single FETs, MOSFETs

Results: 2
Manufacturer
Infineon Technologiesonsemi
Series
-OptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
20 V40 V
Current - Continuous Drain (Id) @ 25°C
915mA (Ta)13A (Ta), 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
9.3mOhm @ 40A, 10V230mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id
1.1V @ 250µA2V @ 14µA
Gate Charge (Qg) (Max) @ Vgs
1.82 nC @ 4.5 V24 nC @ 10 V
Vgs (Max)
±6V±20V
Input Capacitance (Ciss) (Max) @ Vds
110 pF @ 16 V1900 pF @ 20 V
Power Dissipation (Max)
300mW (Tj)2.5W (Ta), 35W (Tc)
Supplier Device Package
PG-TDSON-8-5SC-89-3
Package / Case
8-PowerTDFNSC-89, SOT-490
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

Showing
of 2
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SC-89-3_463C
NTE4153NT1G
MOSFET N-CH 20V 915MA SC89-3
onsemi
126,203
In Stock
1 : ¥3.20000
Cut Tape (CT)
3,000 : ¥0.70353
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
915mA (Ta)
1.5V, 4.5V
230mOhm @ 600mA, 4.5V
1.1V @ 250µA
1.82 nC @ 4.5 V
±6V
110 pF @ 16 V
-
300mW (Tj)
-55°C ~ 150°C (TJ)
Surface Mount
SC-89-3
SC-89, SOT-490
8-Power TDFN
BSC093N04LSGATMA1
MOSFET N-CH 40V 13A/49A TDSON
Infineon Technologies
50,504
In Stock
1 : ¥6.57000
Cut Tape (CT)
5,000 : ¥2.35523
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
13A (Ta), 49A (Tc)
4.5V, 10V
9.3mOhm @ 40A, 10V
2V @ 14µA
24 nC @ 10 V
±20V
1900 pF @ 20 V
-
2.5W (Ta), 35W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-5
8-PowerTDFN
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.