Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

NTGS5120PT1G MOSFET P-CH 60V 1.8A 6TSOP onsemi	33,059 In Stock	1 : ¥4.02000 Cut Tape (CT) 3,000 : ¥1.35880 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	60 V	1.8A (Ta)	4.5V, 10V	111mOhm @ 2.9A, 10V	3V @ 250µA	18.1 nC @ 10 V	±20V	942 pF @ 30 V	-	600mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
IPB027N10N3GATMA1 MOSFET N-CH 100V 120A D2PAK Infineon Technologies	10,044 In Stock	1 : ¥36.04000 Cut Tape (CT) 1,000 : ¥23.94800 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	120A (Tc)	6V, 10V	2.7mOhm @ 100A, 10V	3.5V @ 275µA	206 nC @ 10 V	±20V	14800 pF @ 50 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
NTBLS0D7N06C MOSFET N-CH 60V 54A/470A 8HPSOF onsemi	878 In Stock	1 : ¥70.93000 Cut Tape (CT) 2,000 : ¥37.68896 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Obsolete	N-Channel	MOSFET (Metal Oxide)	60 V	54A (Ta), 470A (Tc)	6V, 10V	0.75mOhm @ 80A, 10V	4V @ 661µA	170 nC @ 10 V	±20V	13730 pF @ 30 V	-	4.2W (Ta), 314W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-HPSOF	8-PowerSFN

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.