Single FETs, MOSFETs

Results: 2
Series
-PowerTrench®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
50 V100 V
Current - Continuous Drain (Id) @ 25°C
210mA (Ta)185A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
4.1mOhm @ 80A, 10V3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id
1.5V @ 1mA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
1.1 nC @ 10 V69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
38 pF @ 25 V3240 pF @ 50 V
Power Dissipation (Max)
340mW (Ta)300W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
8-HPSOFSOT-323
Package / Case
8-PowerSFNSC-70, SOT-323
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
BSS138W
BSS138W
MOSFET N-CH 50V 210MA SC70
onsemi
108,626
In Stock
1 : ¥3.69000
Cut Tape (CT)
3,000 : ¥0.65944
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
50 V
210mA (Ta)
4.5V, 10V
3.5Ohm @ 220mA, 10V
1.5V @ 1mA
1.1 nC @ 10 V
±20V
38 pF @ 25 V
-
340mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323
8-HPSOF Top View
FDBL86066-F085
MOSFET N-CH 100V 185A 8HPSOF
onsemi
4,282
In Stock
1 : ¥28.82000
Cut Tape (CT)
2,000 : ¥14.04029
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
185A (Tc)
10V
4.1mOhm @ 80A, 10V
4V @ 250µA
69 nC @ 10 V
±20V
3240 pF @ 50 V
-
300W (Ta)
-55°C ~ 175°C (TJ)
Surface Mount
8-HPSOF
8-PowerSFN
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.