Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

BSS84W-7-F MOSFET P-CH 50V 130MA SOT323 Diodes Incorporated	354,025 In Stock 7,695,000 Factory	1 : ¥3.20000 Cut Tape (CT) 3,000 : ¥0.57291 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	50 V	130mA (Ta)	5V	10Ohm @ 100mA, 5V	2V @ 1mA	-	±20V	45 pF @ 25 V	-	200mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323	SC-70, SOT-323
IRF540NSTRLPBF MOSFET N-CH 100V 33A D2PAK Infineon Technologies	9,450 In Stock	1 : ¥12.31000 Cut Tape (CT) 800 : ¥6.64328 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	33A (Tc)	10V	44mOhm @ 16A, 10V	4V @ 250µA	71 nC @ 10 V	±20V	1960 pF @ 25 V	-	130W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PSMN3R7-100BSEJ MOSFET N-CH 100V 120A D2PAK Nexperia USA Inc.	15,253 In Stock	1 : ¥37.68000 Cut Tape (CT) 800 : ¥22.76794 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	120A (Tc)	10V	3.95mOhm @ 25A, 10V	4V @ 1mA	246 nC @ 10 V	±20V	16370 pF @ 50 V	-	405W (Tc)	175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPI075N15N3GXKSA1 MOSFET N-CH 150V 100A TO262-3 Infineon Technologies	991 In Stock	1 : ¥45.56000 Tube	OptiMOS™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	150 V	100A (Tc)	8V, 10V	7.5mOhm @ 100A, 10V	4V @ 270µA	93 nC @ 10 V	±20V	5470 pF @ 75 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I2PAK, TO-262AA
AUIRF2804L MOSFET N-CH 40V 195A TO262 Infineon Technologies	960 In Stock	1 : ¥84.31000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	40 V	195A (Tc)	10V	2mOhm @ 75A, 10V	4V @ 250µA	240 nC @ 10 V	±20V	6450 pF @ 25 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2PAK, TO-262AA

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.