Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

EPC2066 TRANSISTOR GAN 40V .001OHM EPC	7,005 In Stock	1 : ¥49.34000 Cut Tape (CT) 1,000 : ¥27.98517 Tape & Reel (TR)	eGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	40 V	90A (Ta)	5V	1.1mOhm @ 50A, 5V	2.5V @ 28mA	33 nC @ 5 V	+6V, -4V	4523 pF @ 20 V	-	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
BSZ031NE2LS5ATMA1 MOSFET N-CH 25V 19A/40A TSDSON Infineon Technologies	7,050 In Stock	1 : ¥8.70000 Cut Tape (CT) 5,000 : ¥3.42787 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	25 V	19A (Ta), 40A (Tc)	4.5V, 10V	3.1mOhm @ 20A, 10V	2V @ 250µA	18.3 nC @ 10 V	±16V	1230 pF @ 12 V	-	2.1W (Ta), 30W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSDSON-8-FL	8-PowerTDFN
BSZ0901NSATMA1 MOSFET N-CH 30V 22A/40A 8TSDSON Infineon Technologies	3,466 In Stock	1 : ¥11.25000 Cut Tape (CT) 5,000 : ¥4.41850 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	22A (Ta), 40A (Tc)	4.5V, 10V	2mOhm @ 20A, 10V	2.2V @ 250µA	45 nC @ 10 V	±20V	2850 pF @ 15 V	-	2.1W (Ta), 50W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSDSON-8	8-PowerTDFN
SIE822DF-T1-GE3 MOSFET N-CH 20V 50A 10POLARPAK Vishay Siliconix	0 In Stock	1 : ¥23.23000 Cut Tape (CT) 3,000 : ¥10.47681 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Obsolete	N-Channel	MOSFET (Metal Oxide)	20 V	50A (Tc)	4.5V, 10V	3.4mOhm @ 18.3A, 10V	3V @ 250µA	78 nC @ 10 V	±20V	4200 pF @ 10 V	-	5.2W (Ta), 104W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	10-PolarPAK® (S)	10-PolarPAK® (S)

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.