Single FETs, MOSFETs

Results: 4
Manufacturer
Infineon TechnologiesVishay Siliconix
Series
OptiMOS™ 5TrenchFET® Gen IIITrenchFET® Gen IV
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
40 V60 V80 V
Current - Continuous Drain (Id) @ 25°C
17A (Ta), 86A (Tc)24A (Ta), 81.2A (Tc)31A (Ta), 100A (Tc)40A (Tc)
Rds On (Max) @ Id, Vgs
3.6mOhm @ 20A, 10V4.2mOhm @ 10A, 10V4.5mOhm @ 20A, 10V7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.3V @ 250µA2.3V @ 26µA2.3V @ 36µA2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
5 nC @ 4.5 V39 nC @ 10 V41 nC @ 10 V330 nC @ 10 V
Vgs (Max)
+20V, -16V±20V
Input Capacitance (Ciss) (Max) @ Vds
2000 pF @ 20 V2340 pF @ 40 V2500 pF @ 30 V12900 pF @ 20 V
Power Dissipation (Max)
2.5W (Ta), 65W (Tc)4.1W (Ta), 46.2W (Tc)6.25W (Ta), 104W (Tc)69W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
PG-TSDSON-8-25PG-TSDSON-8-FLPowerPAK® SO-8
Package / Case
8-PowerTDFNPowerPAK® SO-8
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
PowerPAK SO-8
SI7155DP-T1-GE3
MOSFET P-CH 40V 31A/100A PPAK
Vishay Siliconix
27,151
In Stock
1 : ¥16.34000
Cut Tape (CT)
3,000 : ¥7.37016
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
31A (Ta), 100A (Tc)
4.5V, 10V
3.6mOhm @ 20A, 10V
2.3V @ 250µA
330 nC @ 10 V
±20V
12900 pF @ 20 V
-
6.25W (Ta), 104W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
PowerPAK SO-8
SIRA74DP-T1-GE3
MOSFET N-CH 40V 24A/81.2A PPAK
Vishay Siliconix
14,207
In Stock
1 : ¥8.05000
Cut Tape (CT)
3,000 : ¥3.31517
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
24A (Ta), 81.2A (Tc)
4.5V, 10V
4.2mOhm @ 10A, 10V
2.4V @ 250µA
41 nC @ 10 V
+20V, -16V
2000 pF @ 20 V
-
4.1W (Ta), 46.2W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
ISZ0702NLSATMA1
ISZ0702NLSATMA1
MOSFET N-CH 60V 17A/86A TSDSON
Infineon Technologies
7,870
In Stock
1 : ¥10.26000
Cut Tape (CT)
5,000 : ¥3.83398
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
17A (Ta), 86A (Tc)
4.5V, 10V
4.5mOhm @ 20A, 10V
2.3V @ 26µA
39 nC @ 10 V
±20V
2500 pF @ 30 V
-
2.5W (Ta), 65W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TSDSON-8-25
8-PowerTDFN
TSDSON-8
BSZ070N08LS5ATMA1
MOSFET N-CH 80V 40A TSDSON
Infineon Technologies
21
In Stock
1 : ¥12.31000
Cut Tape (CT)
5,000 : ¥5.34928
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
40A (Tc)
4.5V, 10V
7mOhm @ 20A, 10V
2.3V @ 36µA
5 nC @ 4.5 V
±20V
2340 pF @ 40 V
-
69W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8-FL
8-PowerTDFN
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of 4

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.