Single FETs, MOSFETs

Results: 4
Manufacturer
Infineon Technologiesonsemi
Series
-CoolMOS™ P7OptiMOS®-P2SIPMOS®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveNot For New Designs
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
40 V60 V600 V
Current - Continuous Drain (Id) @ 25°C
230mA (Ta)18A (Tc)50A (Tc)378A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
0.7mOhm @ 50A, 10V10.6mOhm @ 50A, 10V180mOhm @ 5.6A, 10V3.5Ohm @ 230mA, 10V
Vgs(th) (Max) @ Id
1.4V @ 26µA2.2V @ 85µA4V @ 250µA4V @ 280µA
Gate Charge (Qg) (Max) @ Vgs
1.4 nC @ 10 V25 nC @ 10 V59 nC @ 10 V128 nC @ 10 V
Vgs (Max)
+5V, -16V±20V
Input Capacitance (Ciss) (Max) @ Vds
41 pF @ 25 V1081 pF @ 400 V3900 pF @ 25 V8400 pF @ 25 V
Power Dissipation (Max)
360mW (Ta)3.9W (Ta), 200W (Tc)58W (Tc)72W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
5-DFN (5x6) (8-SOFL)PG-SOT23PG-TO252-3-313PG-TO263-3
Package / Case
8-PowerTDFN, 5 LeadsTO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
BSS138NH6327XTSA2
MOSFET N-CH 60V 230MA SOT23-3
Infineon Technologies
103,953
In Stock
1 : ¥3.20000
Cut Tape (CT)
3,000 : ¥0.54533
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
230mA (Ta)
4.5V, 10V
3.5Ohm @ 230mA, 10V
1.4V @ 26µA
1.4 nC @ 10 V
±20V
41 pF @ 25 V
-
360mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-SOT23
TO-236-3, SC-59, SOT-23-3
TO252-3
IPD50P04P4L11ATMA2
MOSFET P-CH 40V 50A TO252-3
Infineon Technologies
4,202
In Stock
1 : ¥11.25000
Cut Tape (CT)
2,500 : ¥4.65850
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
50A (Tc)
4.5V, 10V
10.6mOhm @ 50A, 10V
2.2V @ 85µA
59 nC @ 10 V
+5V, -16V
3900 pF @ 25 V
-
58W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO252-3-313
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB60R180P7ATMA1
MOSFET N-CH 600V 18A D2PAK
Infineon Technologies
2,691
In Stock
1 : ¥18.47000
Cut Tape (CT)
1,000 : ¥8.77580
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
18A (Tc)
10V
180mOhm @ 5.6A, 10V
4V @ 280µA
25 nC @ 10 V
±20V
1081 pF @ 400 V
-
72W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
5-DFN, 8-SO Flat Lead
NVMFS5C404NT1G
MOSFET N-CH 40V 49A 5DFN
onsemi
1,120
In Stock
1 : ¥54.76000
Cut Tape (CT)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
40 V
378A (Tc)
10V
0.7mOhm @ 50A, 10V
4V @ 250µA
128 nC @ 10 V
±20V
8400 pF @ 25 V
-
3.9W (Ta), 200W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.