FET, MOSFET Arrays

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

PMCPB5530X,115 MOSFET N/P-CH 20V 4A/3.4A 6HUSON Nexperia USA Inc.	39,257 In Stock	1 : ¥3.86000 Cut Tape (CT) 3,000 : ¥1.30897 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	-	N and P-Channel	-	20V	4A (Ta), 3.4A (Ta)	34mOhm @ 3A, 4.5V	900mV @ 250µA	21.7nC @ 4.5V	660pF @ 10V	490mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UFDFN Exposed Pad	6-HUSON (2x2)
UT6JA3TCR MOSFET 2P-CH 20V 5A HUML2020L8 Rohm Semiconductor	2,759 In Stock	1 : ¥4.60000 Cut Tape (CT) 3,000 : ¥2.15507 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 P-Channel (Dual)	-	20V	5A (Ta)	59mOhm @ 5A, 4.5V	1.5V @ 1mA	6.5nC @ 4.5V	460pF @ 10V	2W (Ta)	150°C (TJ)	Surface Mount	6-PowerUDFN	HUML2020L8

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FET, MOSFET Arrays

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.