Single FETs, MOSFETs

Results: 3
Manufacturer
ANBON SEMICONDUCTOR (INT'L) LIMITEDEPCInfineon Technologies
Series
-eGaN®OptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Technology
GaNFET (Gallium Nitride)MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V100 V
Current - Continuous Drain (Id) @ 25°C
4.4A (Ta)63A (Tc)101A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V5V6V, 10V
Rds On (Max) @ Id, Vgs
1.8mOhm @ 50A, 5V10.9mOhm @ 46A, 10V55mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id
1.4V @ 250µA2.5V @ 14mA3.5V @ 45µA
Gate Charge (Qg) (Max) @ Vgs
7.2 nC @ 10 V23 nC @ 5 V35 nC @ 10 V
Vgs (Max)
+6V, -4V±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
680 pF @ 15 V2500 pF @ 50 V3200 pF @ 50 V
Power Dissipation (Max)
1.2W (Ta)78W (Tc)-
Operating Temperature
-55°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
7-QFN (3x5)PG-TDSON-8-1SOT-23
Package / Case
7-PowerWQFN8-PowerTDFNTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
PG-TDSON-8-1
BSC109N10NS3GATMA1
MOSFET N-CH 100V 63A TDSON-8-1
Infineon Technologies
30,979
In Stock
1 : ¥13.63000
Cut Tape (CT)
5,000 : ¥5.37141
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
63A (Tc)
6V, 10V
10.9mOhm @ 46A, 10V
3.5V @ 45µA
35 nC @ 10 V
±20V
2500 pF @ 50 V
-
78W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-1
8-PowerTDFN
EPC2302
EPC2302
TRANS GAN 100V DIE .0018OHM
EPC
62,303
In Stock
1 : ¥54.27000
Cut Tape (CT)
3,000 : ¥30.13009
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
100 V
101A (Ta)
5V
1.8mOhm @ 50A, 5V
2.5V @ 14mA
23 nC @ 5 V
+6V, -4V
3200 pF @ 50 V
-
-
-40°C ~ 150°C (TJ)
Surface Mount
7-QFN (3x5)
7-PowerWQFN
AS3401
AS3401
P-CHANNEL ENHANCEMENT MODE MOSFE
ANBON SEMICONDUCTOR (INT'L) LIMITED
49,810
In Stock
1 : ¥2.30000
Cut Tape (CT)
3,000 : ¥0.38299
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
4.4A (Ta)
2.5V, 10V
55mOhm @ 4.4A, 10V
1.4V @ 250µA
7.2 nC @ 10 V
±12V
680 pF @ 15 V
-
1.2W (Ta)
150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.