Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

NTD20P06LT4G MOSFET P-CH 60V 15.5A DPAK onsemi	7,353 In Stock	1 : ¥8.87000 Cut Tape (CT) 2,500 : ¥3.65911 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	60 V	15.5A (Ta)	5V	150mOhm @ 7.5A, 5V	2V @ 250µA	26 nC @ 5 V	±20V	1190 pF @ 25 V	-	65W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
SIRA58ADP-T1-RE3 MOSFET N-CH 40V 32.3A/109A PPAK Vishay Siliconix	16,550 In Stock	1 : ¥9.44000 Cut Tape (CT) 3,000 : ¥3.89681 Tape & Reel (TR)	TrenchFET® Gen IV	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	40 V	32.3A (Ta), 109A (Tc)	4.5V, 10V	2.65mOhm @ 15A, 10V	2.4V @ 250µA	61 nC @ 10 V	+20V, -16V	3030 pF @ 20 V	-	5W (Ta), 56.8W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
IPB200N25N3GATMA1 MOSFET N-CH 250V 64A D2PAK Infineon Technologies	2,171 In Stock	1 : ¥59.85000 Cut Tape (CT) 1,000 : ¥33.94706 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	250 V	64A (Tc)	10V	20mOhm @ 64A, 10V	4V @ 270µA	86 nC @ 10 V	±20V	7100 pF @ 100 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.