Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

BSP317PH6327XTSA1 MOSFET P-CH 250V 430MA SOT223-4 Infineon Technologies	3,473 In Stock	1 : ¥6.81000 Cut Tape (CT) 1,000 : ¥2.91210 Tape & Reel (TR)	SIPMOS®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	250 V	430mA (Ta)	4.5V, 10V	4Ohm @ 430mA, 10V	2V @ 370µA	15.1 nC @ 10 V	±20V	262 pF @ 25 V	-	1.8W (Ta)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-SOT223-4	TO-261-4, TO-261AA
IPB042N10N3GATMA1 MOSFET N-CH 100V 100A D2PAK Infineon Technologies	37,244 In Stock	1 : ¥22.49000 Cut Tape (CT) 1,000 : ¥11.64273 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	100A (Tc)	6V, 10V	4.2mOhm @ 50A, 10V	3.5V @ 150µA	117 nC @ 10 V	±20V	8410 pF @ 50 V	-	214W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
NTBGS001N06C POWER MOSFET, 60 V, 1.1 M?, 342 onsemi	552 In Stock	1 : ¥113.30000 Cut Tape (CT) 800 : ¥78.20414 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Obsolete	N-Channel	MOSFET (Metal Oxide)	60 V	42A (Ta), 342A (Tc)	10V, 12V	1.1mOhm @ 112A, 12V	4V @ 562µA	139 nC @ 10 V	±20V	11110 pF @ 30 V	-	3.7W (Ta), 245W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)	TO-263-7, D2PAK (6 Leads + Tab)

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.