Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
60 V100 V
Current - Continuous Drain (Id) @ 25°C
19A (Tc)29A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V10V
Rds On (Max) @ Id, Vgs
24.7mOhm @ 15A, 10V63.3mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
2.1V @ 1mA4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 10 V14 nC @ 5 V
Vgs (Max)
±10V±20V
Input Capacitance (Ciss) (Max) @ Vds
686 pF @ 30 V1523 pF @ 25 V
Power Dissipation (Max)
56W (Tc)64W (Tc)
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

Showing
of 2
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
LFPAK56/POWER-SO8/SOT669
PSMN030-60YS,115
MOSFET N-CH 60V 29A LFPAK56
Nexperia USA Inc.
4,635
In Stock
1 : ¥5.42000
Cut Tape (CT)
1,500 : ¥2.29486
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
29A (Tc)
10V
24.7mOhm @ 15A, 10V
4V @ 1mA
13 nC @ 10 V
±20V
686 pF @ 30 V
-
56W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
LFPAK56/POWER-SO8/SOT669
BUK9Y65-100E,115
MOSFET N-CH 100V 19A LFPAK56
Nexperia USA Inc.
2,868
In Stock
1 : ¥6.24000
Cut Tape (CT)
1,500 : ¥2.66408
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
19A (Tc)
5V
63.3mOhm @ 5A, 10V
2.1V @ 1mA
14 nC @ 5 V
±10V
1523 pF @ 25 V
-
64W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.