Single FETs, MOSFETs

Results: 3
Manufacturer
Nexperia USA Inc.onsemi
Series
-QFET®TrenchMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
25 V60 V200 V
Current - Continuous Drain (Id) @ 25°C
360mA (Ta)680mA (Ta)11.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.7V, 4.5V10V
Rds On (Max) @ Id, Vgs
450mOhm @ 500mA, 4.5V470mOhm @ 5.75A, 10V1.6Ohm @ 350mA, 10V
Vgs(th) (Max) @ Id
1.5V @ 250µA1.6V @ 250µA5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.7 nC @ 4.5 V2.3 nC @ 4.5 V40 nC @ 10 V
Vgs (Max)
±8V±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 10 V56 pF @ 10 V1200 pF @ 25 V
Power Dissipation (Max)
350mW (Ta)350mW (Ta), 1.14W (Tc)3.13W (Ta), 120W (Tc)
Supplier Device Package
SOT-23-3TO-236ABTO-263 (D2PAK)
Package / Case
TO-236-3, SC-59, SOT-23-3TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-236AB
BSS138BK,215
MOSFET N-CH 60V 360MA TO236AB
Nexperia USA Inc.
458,643
In Stock
1 : ¥2.87000
Cut Tape (CT)
3,000 : ¥0.47814
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
360mA (Ta)
10V
1.6Ohm @ 350mA, 10V
1.6V @ 250µA
0.7 nC @ 4.5 V
±20V
56 pF @ 10 V
-
350mW (Ta), 1.14W (Tc)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
SOT-23-3
FDV303N
MOSFET N-CH 25V 680MA SOT23
onsemi
195,424
In Stock
1 : ¥3.28000
Cut Tape (CT)
3,000 : ¥0.59365
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
25 V
680mA (Ta)
2.7V, 4.5V
450mOhm @ 500mA, 4.5V
1.5V @ 250µA
2.3 nC @ 4.5 V
±8V
50 pF @ 10 V
-
350mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
TO-263
FQB12P20TM
MOSFET P-CH 200V 11.5A D2PAK
onsemi
0
In Stock
Check Lead Time
1 : ¥22.91000
Cut Tape (CT)
800 : ¥9.00390
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
200 V
11.5A (Tc)
10V
470mOhm @ 5.75A, 10V
5V @ 250µA
40 nC @ 10 V
±30V
1200 pF @ 25 V
-
3.13W (Ta), 120W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.