Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
60 V250 V
Current - Continuous Drain (Id) @ 25°C
15A (Ta), 50A (Tc)25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
6.7mOhm @ 50A, 10V60mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
2.2V @ 35µA4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs
29 nC @ 10 V67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2350 pF @ 100 V5100 pF @ 30 V
Power Dissipation (Max)
2.5W (Ta), 69W (Tc)125W (Tc)
Supplier Device Package
PG-TDSON-8-1PG-TDSON-8-5
Stocking Options
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Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
8-Power TDFN
BSC067N06LS3GATMA1
MOSFET N-CH 60V 15A/50A TDSON
Infineon Technologies
8,456
In Stock
1 : ¥12.15000
Cut Tape (CT)
5,000 : ¥4.78591
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
15A (Ta), 50A (Tc)
4.5V, 10V
6.7mOhm @ 50A, 10V
2.2V @ 35µA
67 nC @ 10 V
±20V
5100 pF @ 30 V
-
2.5W (Ta), 69W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-5
8-PowerTDFN
PG-TDSON-8-1
BSC600N25NS3GATMA1
MOSFET N-CH 250V 25A TDSON-8-1
Infineon Technologies
7,450
In Stock
1 : ¥27.42000
Cut Tape (CT)
5,000 : ¥12.78836
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
250 V
25A (Tc)
10V
60mOhm @ 25A, 10V
4V @ 90µA
29 nC @ 10 V
±20V
2350 pF @ 100 V
-
125W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-1
8-PowerTDFN
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of 2

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.