Single FETs, MOSFETs

Results: 2
Manufacturer
Nexperia USA Inc.STMicroelectronics
Series
-STripFET™ II
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C
190mA (Ta)4A (Tc)
Rds On (Max) @ Id, Vgs
100mOhm @ 1.5A, 10V4.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id
2.1V @ 250µA2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.43 nC @ 4.5 V9 nC @ 5 V
Vgs (Max)
±16V±20V
Input Capacitance (Ciss) (Max) @ Vds
17 pF @ 10 V340 pF @ 25 V
Power Dissipation (Max)
265mW (Ta), 1.33W (Tc)3.3W (Tc)
Supplier Device Package
SOT-223TO-236AB
Package / Case
TO-236-3, SC-59, SOT-23-3TO-261-4, TO-261AA
Stocking Options
Environmental Options
Media
Marketplace Product
2Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-236AB
NX7002AK,215
MOSFET N-CH 60V 190MA TO236AB
Nexperia USA Inc.
494,924
In Stock
1 : ¥1.56000
Cut Tape (CT)
3,000 : ¥0.26370
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
190mA (Ta)
5V, 10V
4.5Ohm @ 100mA, 10V
2.1V @ 250µA
0.43 nC @ 4.5 V
±20V
17 pF @ 10 V
-
265mW (Ta), 1.33W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
SOT223-3L
STN3NF06L
MOSFET N-CH 60V 4A SOT223
STMicroelectronics
83,376
In Stock
1 : ¥7.31000
Cut Tape (CT)
4,000 : ¥3.02542
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
4A (Tc)
5V, 10V
100mOhm @ 1.5A, 10V
2.8V @ 250µA
9 nC @ 5 V
±16V
340 pF @ 25 V
-
3.3W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
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of 2

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.