Single FETs, MOSFETs

Results: 3
Manufacturer
ANBON SEMICONDUCTOR (INT'L) LIMITEDonsemiTexas Instruments
Series
-FemtoFET™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
20 V30 V50 V
Current - Continuous Drain (Id) @ 25°C
210mA (Ta)2.3A (Ta)6.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V1.8V, 8V4.5V, 10V
Rds On (Max) @ Id, Vgs
18mOhm @ 6.8A, 4.5V64mOhm @ 500mA, 8V3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id
1V @ 250µA1.2V @ 250µA1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
1.1 nC @ 10 V2.7 nC @ 4.5 V11.05 nC @ 4.5 V
Vgs (Max)
±10V10V±20V
Input Capacitance (Ciss) (Max) @ Vds
38 pF @ 25 V347 pF @ 15 V888 pF @ 10 V
Power Dissipation (Max)
340mW (Ta)500mW (Ta)1.2W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
3-PICOSTARSOT-23SOT-323
Package / Case
3-XFDFNSC-70, SOT-323TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
3Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
BSS138W
BSS138W
MOSFET N-CH 50V 210MA SC70
onsemi
108,556
In Stock
1 : ¥3.69000
Cut Tape (CT)
3,000 : ¥0.65944
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
50 V
210mA (Ta)
4.5V, 10V
3.5Ohm @ 220mA, 10V
1.5V @ 1mA
1.1 nC @ 10 V
±20V
38 pF @ 25 V
-
340mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323
CSDxxxxF4T
CSD17382F4T
MOSFET N-CH 30V 2.3A 3PICOSTAR
Texas Instruments
5,472
In Stock
1 : ¥6.98000
Cut Tape (CT)
250 : ¥4.39816
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
2.3A (Ta)
1.8V, 8V
64mOhm @ 500mA, 8V
1.2V @ 250µA
2.7 nC @ 4.5 V
10V
347 pF @ 15 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
3-PICOSTAR
3-XFDFN
AS2312
AS2312
N-CHANNEL ENHANCEMENT MODE MOSFE
ANBON SEMICONDUCTOR (INT'L) LIMITED
2,858
In Stock
1 : ¥2.22000
Cut Tape (CT)
3,000 : ¥0.37565
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
6.8A (Ta)
1.8V, 4.5V
18mOhm @ 6.8A, 4.5V
1V @ 250µA
11.05 nC @ 4.5 V
±10V
888 pF @ 10 V
-
1.2W (Ta)
150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.