Single FETs, MOSFETs

Results: 3
Manufacturer
Toshiba Semiconductor and StorageVishay Siliconix
Series
TrenchFET®U-MOSVIII-H
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
30 V100 V
Current - Continuous Drain (Id) @ 25°C
33A (Ta)40A (Tc)90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
2.15mOhm @ 15A, 10V8.2mOhm @ 20A, 10V9.7mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA4V @ 500µA4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
28 nC @ 10 V77 nC @ 10 V150 nC @ 10 V
Vgs (Max)
+20V, -16V±20V
Input Capacitance (Ciss) (Max) @ Vds
2050 pF @ 10 V3595 pF @ 15 V6290 pF @ 50 V
Power Dissipation (Max)
3.75W (Ta), 300W (Tc)5W (Ta), 62.5W (Tc)125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)175°C (TJ)
Supplier Device Package
DPAK+PowerPAK® SO-8TO-263 (D2PAK)
Package / Case
PowerPAK® SO-8TO-252-3, DPAK (2 Leads + Tab), SC-63TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
5,597
In Stock
1 : ¥18.23000
Cut Tape (CT)
2,000 : ¥5.39930
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
33A (Ta)
10V
9.7mOhm @ 16.5A, 10V
4V @ 500µA
28 nC @ 10 V
±20V
2050 pF @ 10 V
-
125W (Tc)
175°C (TJ)
Surface Mount
DPAK+
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-263 (D2Pak)
SUM90N10-8M2P-E3
MOSFET N-CH 100V 90A TO263
Vishay Siliconix
5,143
In Stock
1 : ¥35.06000
Cut Tape (CT)
800 : ¥21.18613
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
90A (Tc)
10V
8.2mOhm @ 20A, 10V
4.5V @ 250µA
150 nC @ 10 V
±20V
6290 pF @ 50 V
-
3.75W (Ta), 300W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PowerPAK SO-8
SIRA04DP-T1-GE3
MOSFET N-CH 30V 40A PPAK SO-8
Vishay Siliconix
5,694
In Stock
1 : ¥10.43000
Cut Tape (CT)
3,000 : ¥4.30101
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
40A (Tc)
4.5V, 10V
2.15mOhm @ 15A, 10V
2.2V @ 250µA
77 nC @ 10 V
+20V, -16V
3595 pF @ 15 V
-
5W (Ta), 62.5W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.