Single FETs, MOSFETs

Results: 3

Filters

Stacked

Scrolling

Showing

of 3

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

BUK969R0-60E,118 MOSFET N-CH 60V 75A D2PAK Nexperia USA Inc.	5,227 In Stock	1 : ¥14.86000 Cut Tape (CT) 800 : ¥8.31665 Tape & Reel (TR)	TrenchMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	75A (Tc)	5V	8mOhm @ 20A, 10V	2.1V @ 1mA	29.8 nC @ 5 V	±10V	4350 pF @ 25 V	-	137W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	D2PAK	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IRLR120NTRLPBF MOSFET N-CH 100V 10A DPAK Infineon Technologies	2,375 In Stock	1 : ¥9.03000 Cut Tape (CT) 3,000 : ¥3.72364 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	100 V	10A (Tc)	4V, 10V	185mOhm @ 6A, 10V	2V @ 250µA	20 nC @ 5 V	±16V	440 pF @ 25 V	-	48W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-252AA (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
SL3401A-TP MOSFET P-CH 30V 4.4A SOT23-3L Micro Commercial Co	0 In Stock Check Lead Time	1 : ¥3.37000 Cut Tape (CT) 3,000 : ¥0.61289 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	4.4A (Tj)	2.5V, 10V	60mOhm @ 4.2A, 10V	1.3V @ 250µA	-	±12V	1050 pF @ 15 V	-	1.5W	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3L	TO-236-3, SC-59, SOT-23-3

Showing

of 3

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.