Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

STN3NF06L MOSFET N-CH 60V 4A SOT223 STMicroelectronics	77,831 In Stock	1 : ¥7.31000 Cut Tape (CT) 4,000 : ¥3.02542 Tape & Reel (TR)	STripFET™ II	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	4A (Tc)	5V, 10V	100mOhm @ 1.5A, 10V	2.8V @ 250µA	9 nC @ 5 V	±16V	340 pF @ 25 V	-	3.3W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-223	TO-261-4, TO-261AA
IPB180N10S402ATMA1 MOSFET N-CH 100V 180A TO263-7 Infineon Technologies	2,139 In Stock	1 : ¥49.83000 Cut Tape (CT) 1,000 : ¥28.27399 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	180A (Tc)	10V	2.5mOhm @ 100A, 10V	3.5V @ 275µA	200 nC @ 10 V	±20V	14600 pF @ 25 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-TO263-7-3	TO-263-7, D2PAK (6 Leads + Tab)
IPW65R050CFD7AXKSA1 MOSFET N-CH 650V 45A TO247-3-41 Infineon Technologies	224 In Stock	1 : ¥55.01000 Tube	CoolMOS™ CFD7A	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	45A (Tc)	10V	50mOhm @ 24.8A, 10V	4.5V @ 1.24mA	102 nC @ 10 V	±20V	4975 pF @ 400 V	-	227W (Tc)	-40°C ~ 150°C (TJ)	Automotive	AEC-Q101	Through Hole	PG-TO247-3-41	TO-247-3

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.