Single FETs, MOSFETs

Results: 5
Manufacturer
Nexperia USA Inc.onsemiVishay Siliconix
Series
-TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
20 V60 V100 V
Current - Continuous Drain (Id) @ 25°C
115mA (Ta)200mA270mA (Ta), 330mA (Tc)2.6A (Ta)6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V2.5V, 4.5V4.5V, 10V5V, 10V
Rds On (Max) @ Id, Vgs
31.8mOhm @ 5A, 4.5V57mOhm @ 3.6A, 4.5V2.8Ohm @ 200mA, 10V5Ohm @ 200mA, 10V7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
850mV @ 250µA1V @ 250µA2.1V @ 250µA2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
1 nC @ 10 V1.8 nC @ 10 V5.5 nC @ 4.5 V18 nC @ 5 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
14 pF @ 25 V23.6 pF @ 10 V50 pF @ 25 V865 pF @ 10 V
Power Dissipation (Max)
200mW (Ta)310mW (Ta), 1.67W (Tc)350mW (Ta)710mW (Ta)1.25W (Ta), 2.1W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
SOT-23-3SOT-23-3 (TO-236)TO-236AB
Stocking Options
Environmental Options
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Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
BSS123
MOSFET N-CH 100V 170MA SOT23-3
onsemi
28,327
In Stock
1 : ¥2.87000
Cut Tape (CT)
3,000 : ¥0.51984
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
200mA
4.5V, 10V
5Ohm @ 200mA, 10V
2.5V @ 250µA
1.8 nC @ 10 V
±20V
14 pF @ 25 V
-
350mW (Ta)
150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-23-3
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
Vishay Siliconix
142,825
In Stock
1 : ¥3.28000
Cut Tape (CT)
3,000 : ¥0.87982
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
2.6A (Ta)
2.5V, 4.5V
57mOhm @ 3.6A, 4.5V
850mV @ 250µA
5.5 nC @ 4.5 V
±8V
-
-
710mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
SOT-23-3
SI2312CDS-T1-GE3
MOSFET N-CH 20V 6A SOT23-3
Vishay Siliconix
115,853
In Stock
1 : ¥3.45000
Cut Tape (CT)
3,000 : ¥1.16191
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
6A (Tc)
1.8V, 4.5V
31.8mOhm @ 5A, 4.5V
1V @ 250µA
18 nC @ 5 V
±8V
865 pF @ 10 V
-
1.25W (Ta), 2.1W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
SOT-23-3
2N7002
MOSFET SOT23 N 60V 5OHM 150C
onsemi
93,685
In Stock
1 : ¥3.69000
Cut Tape (CT)
3,000 : ¥0.98624
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
115mA (Ta)
5V, 10V
7.5Ohm @ 500mA, 10V
2.5V @ 250µA
-
±20V
50 pF @ 25 V
-
200mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
TO-236AB
2N7002NXBKR
MOSFET N-CH 60V 270MA TO236AB
Nexperia USA Inc.
35,756
In Stock
1 : ¥1.56000
Cut Tape (CT)
3,000 : ¥0.26392
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
270mA (Ta), 330mA (Tc)
5V, 10V
2.8Ohm @ 200mA, 10V
2.1V @ 250µA
1 nC @ 10 V
±20V
23.6 pF @ 10 V
-
310mW (Ta), 1.67W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.