Single FETs, MOSFETs

Results: 2
Manufacturer
Central Semiconductor CorpRohm Semiconductor
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveNot For New Designs
Drain to Source Voltage (Vdss)
20 V60 V
Current - Continuous Drain (Id) @ 25°C
300mA (Ta)1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4V5V, 10V
Rds On (Max) @ Id, Vgs
220mOhm @ 500mA, 10V1Ohm @ 300mA, 4V
Vgs(th) (Max) @ Id
1V @ 1mA2.3V @ 250µA
Vgs (Max)
±8V20V
Input Capacitance (Ciss) (Max) @ Vds
25 pF @ 10 V240 pF @ 25 V
Power Dissipation (Max)
150mW (Ta)350mW (Ta)
Operating Temperature
-65°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
EMT3SOT-23
Package / Case
SC-75, SOT-416TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
2SA2018TL
RUE003N02TL
MOSFET N-CH 20V 300MA EMT3
Rohm Semiconductor
81,133
In Stock
1 : ¥2.38000
Cut Tape (CT)
3,000 : ¥0.52171
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
20 V
300mA (Ta)
1.8V, 4V
1Ohm @ 300mA, 4V
1V @ 1mA
-
±8V
25 pF @ 10 V
-
150mW (Ta)
150°C (TJ)
Surface Mount
EMT3
SC-75, SOT-416
10,520
In Stock
1 : ¥5.17000
Cut Tape (CT)
3,000 : ¥1.74776
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
1A (Ta)
5V, 10V
220mOhm @ 500mA, 10V
2.3V @ 250µA
2.3 nC @ 4.5 V
20V
240 pF @ 25 V
-
350mW (Ta)
-65°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.